Complementary logic with 60 nm poly gate JFET for 0.5 V operation von KAPOOR, A. K, ZHANG, W, PRASAD, J, THUMMALAPALLY, D, CHOU, R, SONKUSALE, S, LIU, Y, GREGORY, P, SRIDHARAN, U. C, STAGER, C, EIB, N, XIE, Z, VORA, M

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Detailed course of the O + HO2 reaction von Sridharan, U. C., Klein, F. S., Kaufman, F.

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Primary products of the O+C2H4 reaction von SRIDHARAN, U. C, KAUFMAN, F

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Complementary logic with 60 nm poly gate JFET for 0.5 V operation von Kapoor, A K, Zhang, W, Sonkusale, S, Liu, Y, Gregory, P, Sridharan, U C, Stager, C, Eib, N, Xie, Z, Vora, M, Prasad, J, Thummalapally, D, Chou, R

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Rate constant of the hydroxyl + perhydroxyl (HO2) reaction from 252 to 420 K von Sridharan, U. C, Qiu, L. X, Kaufman, F

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Kinetics of the reaction OH+H2O2→HO2+H2O von Sridharan, U. C., Reimann, B., Kaufman, F.

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Rate constant of the OH+HO2 reaction from 252 to 420 K von SRIDHARAN, U. C, QIU, L. X, KAUFMAN, F

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Kinetics and product channels of the reactions of perhydroxyl with oxygen and hydrogen atoms at 296 K von Sridharan, U. C, Qiu, L. X, Kaufman, F

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Kinetics of the reaction OH + HO2 .fwdarw. H2O + O2 von Sridharan, U. C, Qiu, L. X, Kaufman, F

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Semiconductor structure with multiple transistors having various threshold voltages von Zhao, Dalong, Scudder, Lance, Duane, Michael, Bakhishev, Teymur, Hoffmann, Thomas, Sridharan, U. C, Ranade, Pushkar, Gregory, Paul E, Shifren, Lucian

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Semiconductor structure with multiple transistors having various threshold voltages von Zhao, Dalong, Scudder, Lance, Duane, Michael, Bakhishev, Teymur, Hoffmann, Thomas, Sridharan, U. C, Ranade, Pushkar, Gregory, Paul E, Shifren, Lucian

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Semiconductor structure with multiple transistors having various threshold voltages von Scudder Lance, Hoffmann Thomas, Shifren Lucian, Gregory Paul E, Zhao Dalong, Duane Michael, Sridharan U. C, Bakhishev Teymur, Ranade Pushkar

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Ultraviolet emission from tin in a low pressure flame of (CH3)4Sn, H2, and F2 von Sridharan, U. C., McFadden, D. L.

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Chemiluminescence from the gas phase reaction of atomic boron with the alkali metal fluorides von Sridharan, U. C., McFadden, D. L., Davidovits, P.

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Chemiluminescence from the gas phase reaction of atomic carbon with lead oxide von Sridharan, U.C., Digiuseppe, T.G., McFadden, D.L., Davidovits, P.

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Semiconductor structure with multiple transistors having various threshold voltages von ZHAO DALONG, SRIDHARAN U. C, SCUDDER LANCE, DUANE MICHAEL, SHIFREN LUCIAN, GREGORY PAUL E, BAKHISHEV TEYMUR, RANADE PUSHKAR, HOFFMANN THOMAS

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CMOS structures and processes based on selective thinning von SRIDHARAN U. C, ZHAO DALONG, SCUDDER LANCE, THOMPSON SCOTT E, DUANE MICHAEL, GREGORY PAUL E, HOFFMANN THOMAS, RANADE PUSHKAR

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FILM BULK ACOUSTIC RESONATOR DEVICES WITH TEMPERATURE COMPENSATION von ROGERS CARRIE A, GRANNEN KEVIN J, LEE DONALD E, CHOY JOHN, FENG HONGJUN, SRIDHARAN U C, LARSON III JOHN D

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Rate constants for the reactions of atomic boron with O2, SO2, CO2, and N2O von Sridharan, U. C., DiGiuseppe, T. G., McFadden, D. L., Davidovits, P.

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Kinetics of the reaction OH + HO2 yields H2O + O2 at 296 K von Sridharan, U C, Kaufman, F, Qiu, L X

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