Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs von Rawat, Akanksha, Meer, Mudassar, Surana, Vivek kumar, Bhardwaj, Navneet, Pendem, Vikas, Garigapati, Navya Sri, Yadav, Yogendra, Ganguly, Swaroop, Saha, Dipankar

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8-band k  ⋅ p modeling of strained InxGa(1−x)As/InP heterostructure nanowires von Garigapati, Navya Sri, Lind, Erik

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Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs von Garigapati, Navya Sri, Södergren, Lasse, Olausson, Patrik, Lind, Erik

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Strained In x Ga(1− x )As/InP near surface quantum wells and MOSFETs von Garigapati, Navya Sri, Södergren, Lasse, Olausson, Patrik, Lind, Erik

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Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates von Logotheti, Adamantia, Garigapati, Navya Sri, So, Byeongchan, Colvin, Jovana, Darakchieva, Vanya, Lind, Erik

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Strained InxGa(1−x)As/InP near surface quantum wells and MOSFETs von Garigapati, Navya Sri, Södergren, Lasse, Olausson, Patrik, Lind, Erik

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Mobility of near surface MOVPE grown InGaAs/InP quantum wells von Södergren, Lasse, Garigapati, Navya Sri, Borg, Mattias, Lind, Erik

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III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications von Lindelöw, Fredrik, Sri Garigapati, Navya, Södergren, Lasse, Borg, Mattias, Lind, Erik

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Radio Frequency InGaAs MOSFETs von Garigapati, Navya Sri

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Thermally Grown TiO 2 and Al 2 O 3 for GaN-Based MOS-HEMTs von Rawat, Akanksha, Meer, Mudassar, Surana, Vivek kumar, Bhardwaj, Navneet, Pendem, Vikas, Garigapati, Navya Sri, Yadav, Yogendra, Ganguly, Swaroop, Saha, Dipankar

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