Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling von Turuvekere, Sreenidhi, Karumuri, Naveen, Rahman, A. Azizur, Bhattacharya, Arnab, DasGupta, Amitava, DasGupta, Nandita

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Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs von Turuvekere, Sreenidhi, DasGupta, Amitava, DasGupta, Nandita

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Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT von Dutta, Gourab, Turuvekere, Sreenidhi, Karumuri, Naveen, DasGupta, Nandita, DasGupta, Amitava

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A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages von Karumuri, Naveen, Turuvekere, Sreenidhi, DasGupta, Nandita, DasGupta, Amitava

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High Pressure Oxidation of 4H-SiC in Nitric Acid Vapor von Selvi, K. Kalai, Sreenidhi, Turuvekere, DasGupta, Nandita, Ryssel, Heiner, Bauer, Anton

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Physical Insights and Accurate Modeling of Transconductance in Body-Contacted Dynamically Depleted SOI MOSFETs von Nandi, Debashish, Dabhi, Chetan Kumar, Rajasekharan, Dinesh, Karumuri, Naveen, Turuvekere, Sreenidhi, Choppalli, Satyasuresh, Pratiyush, Anamika Singh, Hu, Chenming, Chauhan, Yogesh Singh

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High Pressure Oxidation of 4H-SiC in Nitric Acid Vapor von Selvi, K. Kalai, Sreenidhi, Turuvekere, DasGupta, Nandita, Ryssel, Heiner, Bauer, Anton

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Symmetric BSIM-SOI-Part I: A Compact Model for Dynamically Depleted SOI MOSFETs von Dabhi, Chetan Kumar, Rajasekharan, Dinesh, Pahwa, Girish, Nandi, Debashish, Karumuri, Naveen, Turuvekere, Sreenidhi, Dutta, Anupam, Swaminathan, Balaji, Srihari, Srikanth, Chauhan, Yogesh S., Salahuddin, Sayeef, Hu, Chenming

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Symmetric BSIM-SOI-Part II: A Compact Model for Partially Depleted SOI MOSFETs von Dabhi, Chetan Kumar, Nandi, Debashish, Nandan, Keshari, Rajasekharan, Dinesh, Pahwa, Girish, Karumuri, Naveen, Turuvekere, Sreenidhi, Dutta, Anupam, Swaminathan, Balaji, Srihari, Srikanth, Chauhan, Yogesh S., Salahuddin, Sayeef, Hu, Chenming

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Utilizing Symmetric BSIM-SOI SPICE Model for Dynamically Depleted RF SOI T/R Switches and Logic Circuits von Nandi, Debashish, Dabhi, Chetan Kumar, Rajasekharan, Dinesh, Karumuri, Naveen, Turuvekere, Sreenidhi, Swaminathan, Balaji, Srihari, Srikanth, Dutta, Anupam, Hu, Chenming, Chauhan, Yogesh Singh

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Evidence of Fowler-Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature von Turuvekere, Sreenidhi, Rawal, Dipendra Singh, DasGupta, Amitava, DasGupta, Nandita

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Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al 2 O 3 /AlInN/GaN MIS-HEMT von Dutta, Gourab, Turuvekere, Sreenidhi, Karumuri, Naveen, DasGupta, Nandita, DasGupta, Amitava

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Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling : GaN ELECTRONIC DEVICES von TURUVEKERE, Sreenidhi, KARUMURI, Naveen, AZIZUR RAHMAN, A, BHATTACHARYA, Arnab, DASGUPTA, Amitava, DASGUPTA, Nandita

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