Recent Developments in Species Sensitivity Distribution Modeling von Fox, D.R., Dam, R.A., Fisher, R., Batley, G.E., Tillmanns, A.R., Thorley, J., Schwarz, C.J., Spry, D.J., McTavish, K.

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A Bondable Metallization Stack That Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating Above 500°C von Spry, D.J., Lukco, D.

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Metal bioavailability and toxicity to fish in low-alkalinity lakes: A critical review von Spry, Douglas J., Wiener, James G.

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Chemical Analysis of Materials Exposed to Venus Temperature and Surface Atmosphere von Lukco, D., Spry, D. J., Harvey, R. P., Costa, G. C. C., Okojie, R. S., Avishai, A., Nakley, L. M., Neudeck, P. G., Hunter, G. W.

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Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers von Powell, J. Anthony, Trunek, Andrew J., Spry, David J., Neudeck, Philip G.

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Growth and characterization of 3C–SiC and 2H–AlN/GaN films and devices produced on step-free 4H–SiC mesa substrates von Neudeck, P G, Du, H, Skowronski, M, Spry, D J, Trunek, A J

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High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas von Trunek, Andrew J., Spry, David J., Neudeck, Philip G.

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Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects von Powell, J. Anthony, Trunek, Andrew J., Spry, David J., Neudeck, Philip G.

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Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias von Crimp, M.A., Trunek, Andrew J., Neudeck, Philip G., Pirouz, P., Burda, C., Speer, Kevin M., Spry, David J., Hile, J.T.

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A Bondable Metallization Stack That Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating Above 500 degree C von Spry, D J, Lukco, D

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Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas von Powell, J. Anthony, Skowronski, Marek, Du, H., Trunek, Andrew J., Spry, David J., Neudeck, Philip G.

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Modelling N21P contamination in auroral O+ emissions von Spry, J.D., Jokiaho, O., Lanchester, B.S., Whiter, D.K.

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4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K von Spry, David J, Neudeck, Phil G, Chen, Liangyu, Chang, Carl W, Lukco, Dorothy, Beheim, Glenn M.

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CVD Growth of 3C-SiC on 4H/6H Mesas von Neudeck, P. G., Trunek, A. J., Spry, D. J., Powell, J. A., Du, H., Skowronski, M., Huang, X. R., Dudley, M.

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Novel light-emitting devices based on pyridine-containing conjugated polymers von Wang, Y.Z., Gebler, D.D., Spry, D.J., Fu, D.K., Swager, T.M., MacDiamid, A.G., Epstein, A.J.

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Acid-base, plasma ion and blood gas changes in rainbow trout during short term toxic zinc exposure von SPRY, D. J, WOOD, C. M

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The distribution of zinc and copper in plasma, erythrocytes and erythrocyte membranes of rainbow trout ( Salmo Gairdneri) von Bettger, William J., Spryf, Douglas J., Cockell, Kevin A., Cho, C.Young, Hilton, John W.

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(Invited) High Temperature Wireless Smart Sensor Technology Based on Silicon Carbide Electronics von Hunter, Gary W., Scardelletti, M. C., Ponchak, G. E., Beheim, G. M., Mackey, J. A., Spry, D. J., Meredith, R. D., Dynys, F. W., Neudeck, P G, Jordan, J. L., Chen, L. Y., Harsh, K., Zorman, Christian A.

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Growth and characterization of 3C-SiC and 2H-AlN/GaN films and devices produced on step-free 4H-SiC mesa substrates: Wide band gap semiconductors von NEUDECK, P. G, DU, H, SKOWRONSKI, M, SPRY, D. J, TRUNEK, A. J

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 [Formula Omitted] von Neudeck, P.G, Spry, D.J, Chen, Liang-Yu, Beheim, G.M, Okojie, R.S, Chang, C.W, Meredith, R.D, Ferrier, T.L, Evans, L.J, Krasowski, M.J, Prokop, N.F

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