What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes? von Piprek, J., White, J.K., SpringThorpe, A.J.

Volltext

Terahertz Quantum Well Photodetectors von Liu, H.C., Hui Luo, Chun-ying Song, Wasilewski, Z.R., SpringThorpe, A.J., Cao, J.C.

Volltext

Organic-Inorganic Hybrid Optical Upconverter von Dayan Ban, Han, S., Lu, Z.H., Oogarah, T., SpringThorpe, A.J., Liu, H.C.

Volltext

The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD von Salehzadeh, O., He, C., Benyon, W., SpringThorpe, A.J.

Volltext

Planar avalanche photodiodes with edge breakdown suppression using a novel selective area growth based process von Pitts, O.J., Hisko, M., Benyon, W., Bonneville, G., Storey, C., SpringThorpe, A.J.

Volltext

Scanning voltage microscopy on active semiconductor lasers: the impact of doping profile near an epitaxial growth interface on series resistance von Ban, D., Sargent, E.H., Dixon-Warren, St.J., Hinzer, K., White, J.K., SpringThorpe, A.J.

Volltext

Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes von Pitts, O.J., Hisko, M., Benyon, W., Raymond, S., SpringThorpe, A.J.

Volltext

Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP von Pitts, O.J., Benyon, W., SpringThorpe, A.J.

Volltext

Intensity-dependent reflectance and transmittance of semiconductor periodic structures von Brzozowski, L., Sukhovatkin, V., Sargent, E.H., SpringThorpe, A.J., Extavour, M.

Volltext

Correlation of proton radiation damage in InGaAs-GaAs quantum-well light-emitting diodes von Walters, R.J., Messenger, S.R., Summers, G.P., Burke, E.A., Khanna, S.M., Estan, D., Erhardt, L.S., Hui Chun Liu, Mae Gao, Buchanan, M., SpringThorpe, A.J., Houdayer, A., Carlone, C.

Volltext

Microcavity-enhanced surface-emitted second-harmonic generation for ultrafast all-optical signal processing von Ulmer, T.G., Hanna, M., Washburn, B.R., Ralph, S.E., SpringThorpe, A.J.

Volltext

Multiwafer zinc diffusion in an OMVPE reactor von Pitts, O.J., Benyon, W., Goodchild, D., SpringThorpe, A.J.

Volltext

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers von Houle, T.J., Yong, J.C.L., Marinelli, C.M., Yu, S., Rorison, J.M., White, I.H., White, J.K., SpringThorpe, A.J., Garrett, B.

Volltext

1-15 MeV proton and alpha particle radiation effects on GaAs quantum well light emitting diodes [and QWIPs] von Khanna, S.M., Estan, D., Liu, H.C., Gao, M., Buchanan, M., SpringThorpe, A.J.

Volltext

160-Gb/s optically time-division multiplexed link with all-optical demultiplexing von Ulmer, T.G., Gross, M.C., Patel, K.M., Simmons, J.T., Juodawlkis, P.W., Wasbburn, B.R., Astar, W.S., SpringThorpe, A.J., Kenan, R.P., Verber, C.M., Ralph, S.E.

Volltext

Anomalous dephasing of two-dimensional electrons in an AlGaAs/GaAs parabolic quantum well structure von Gao, K.H., Yu, G., SpringThorpe, A.J., Austing, D.G., Lin, T., Hu, G.J., Dai, N., Chu, J.H.

Volltext

High-performance 1.52 µm InAs/InP quantum dot distributed feedback laser von Lu, Z.G., Poole, P.J., Liu, J.R., Barrios, P.J., Jiao, Z.J., Pakulski, G., Poitras, D., Goodchild, D., Rioux, B., SpringThorpe, A.J.

Volltext

Near-infrared optical upconverter based on i-In 0.53 Ga 0.47 As/C 60 photovoltaic heterojunction von Chen, J., Ban, D., Helander, M.G., Lu, Z., Graf, M., SpringThorpe, A.J., Liu, H.C.

Volltext

Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array von BEZINGER, A, LIU, H. C, ASIAN, B, BUCHANAN, M, SPRINGTHORPE, A. J, POOLE, P. J, CARDIMONA, D. A, BROWN, G. J

Volltext

Oxidation of III–V semiconductors von Graham, M.J., Moisa, S., Sproule, G.I., Wu, X., Landheer, D., SpringThorpe, A.J., Barrios, P., Kleber, S., Schmuki, P.

Volltext