Terahertz quantum-well photodetector von Liu, H. C., Song, C. Y., SpringThorpe, A. J., Cao, J. C.

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Planar avalanche photodiodes with edge breakdown suppression using a novel selective area growth based process von Pitts, O.J., Hisko, M., Benyon, W., Bonneville, G., Storey, C., SpringThorpe, A.J.

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What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes? von Piprek, J., White, J.K., SpringThorpe, A.J.

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Coupled electron-phonon modes in optically pumped resonant intersubband lasers von Liu, H C, Song, C Y, Wasilewski, Z R, SpringThorpe, A J, Cao, J C, Dharma-Wardana, C, Aers, G C, Lockwood, D J, Gupta, J A

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Anomalous dephasing of two-dimensional electrons in an AlGaAs/GaAs parabolic quantum well structure von Gao, K.H., Yu, G., SpringThorpe, A.J., Austing, D.G., Lin, T., Hu, G.J., Dai, N., Chu, J.H.

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Optimized GaAs∕AlGaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devices von Ban, D., Luo, H., Liu, H. C., Wasilewski, Z. R., SpringThorpe, A. J., Glew, R., Buchanan, M.

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Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-μm AlGaInAs MQW lasers von HOULE, T. J, YONG, J. C. L, MARINELLI, C. M, YU, S, RORISON, J. M, WHITE, I. H, WHITE, J. K, SPRINGTHORPE, A. J, GARRETT, B

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Quantum and transport mobilities in an AlGaAs ∕ GaAs parabolic quantum-well structure von Yu, G., Studenikin, S. A., SpringThorpe, A. J., Aers, G. C., Austing, D. G.

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Quantum dot semiconductor lasers with optical feedback von Huyet, G., O'Brien, D., Hegarty, S. P., McInerney, J. G., Uskov, A. V., Bimberg, D., Ribbat, C., Ustinov, V. M., Zhukov, A. E., Mikhrin, S. S., Kovsh, A. R., White, J. K., Hinzer, K., SpringThorpe, A. J.

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Intersubband Raman Laser von Liu, H. C., Cheung, Iva W., SpringThorpe, A. J., Dharma-wardana, C., Wasilewski, Z. R., Lockwood, D. J., Aers, G. C.

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Optically pumped intersubband laser: Resonance positions and many-body effects von Liu, H. C., SpringThorpe, A. J.

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Scanning voltage microscopy on active semiconductor lasers: the impact of doping profile near an epitaxial growth interface on series resistance von Ban, D., Sargent, E.H., Dixon-Warren, St.J., Hinzer, K., White, J.K., SpringThorpe, A.J.

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Composition of AlGaAs von Wasilewski, Z. R., Dion, M. M., Lockwood, D. J., Poole, P., Streater, R. W., SpringThorpe, A. J.

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Direct imaging of the depletion region of an InP p–n junction under bias using scanning voltage microscopy von Ban, D., Sargent, E. H., Dixon-Warren, St. J., Calder, I., SpringThorpe, A. J., Dworschak, R., Este, G., White, J. K.

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1.5 μm to 0.87 μm optical upconversion using wafer fusion technology von Luo, H., Ban, D., Liu, H. C., SpringThorpe, A. J., Wasilewski, Z. R., Buchanan, M., Glew, R.

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Passive mode locking of InAlGaAs 1.3-μm strained quantum wells extended cavity laser fabricated by quantum-well intermixing von Robert, F., Bryce, A.C., Marsh, J.H., SpringThorpe, A.J., White, J.K.

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Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots von Hinzer, K., Lapointe, J., Feng, Y., Delâge, A., Fafard, S., SpringThorpe, A. J., Griswold, E. M.

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Scanning spreading resistance microscopy current transport studies on doped III – V semiconductors von Lu, R. P., Kavanagh, K. L., Dixon-Warren, St. J., SpringThorpe, A. J., Streater, R., Calder, I.

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Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy von Ban, D., Sargent, E. H., Hinzer, K., Dixon-Warren, St. J., SpringThorpe, A. J., White, J. K.

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Terahertz quantum-well photodetectors von Liu, H.C., Song, C.Y., SpringThorpe, A.J., Cao, J.C.

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