Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes von Pitts, O.J., Hisko, M., Benyon, W., Raymond, S., SpringThorpe, A.J.

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Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP von Pitts, O.J., Benyon, W., SpringThorpe, A.J.

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Terahertz quantum-well photodetector von Liu, H. C., Song, C. Y., SpringThorpe, A. J., Cao, J. C.

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Multiwafer zinc diffusion in an OMVPE reactor von Pitts, O.J., Benyon, W., Goodchild, D., SpringThorpe, A.J.

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Vertically tapered waveguide spot size converters fabricated via a linewidth controlled grey tone lithography for InP-based photonic integrated circuits von Salehzadeh, O., Vachon, M., Sabourin, N., Janz, S., SpringThorpe, A. J.

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Zn diffusion depth effect on photoresponse uniformity in InP/InGaAs avalanche photodiodes von Walker, A. W., Moisa, S., Springthorpe, A. J., Pitts, O. J.

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Edge Breakdown Suppression of Avalanche Photodiodes Using Zn Diffusion and Selective Area Growth von Salehzadeh, O., Bonneville, G., Pitts, O. J., Springthorpe, A. J.

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The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD von Salehzadeh, O., He, C., Benyon, W., SpringThorpe, A.J.

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Organic-Inorganic Hybrid Optical Upconverter von Dayan Ban, Han, S., Lu, Z.H., Oogarah, T., SpringThorpe, A.J., Liu, H.C.

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Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-μm AlGaInAs MQW lasers von HOULE, T. J, YONG, J. C. L, MARINELLI, C. M, YU, S, RORISON, J. M, WHITE, I. H, WHITE, J. K, SPRINGTHORPE, A. J, GARRETT, B

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Optimized GaAs∕AlGaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devices von Ban, D., Luo, H., Liu, H. C., Wasilewski, Z. R., SpringThorpe, A. J., Glew, R., Buchanan, M.

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Planar avalanche photodiodes with edge breakdown suppression using a novel selective area growth based process von Pitts, O.J., Hisko, M., Benyon, W., Bonneville, G., Storey, C., SpringThorpe, A.J.

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Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array von BEZINGER, A, LIU, H. C, ASIAN, B, BUCHANAN, M, SPRINGTHORPE, A. J, POOLE, P. J, CARDIMONA, D. A, BROWN, G. J

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Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector von Ban, D., Han, S., Lu, Z. H., Oogarah, T., SpringThorpe, A. J., Liu, H. C.

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Composition of AlGaAs von Wasilewski, Z. R., Dion, M. M., Lockwood, D. J., Poole, P., Streater, R. W., SpringThorpe, A. J.

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Scanning voltage microscopy on active semiconductor lasers: the impact of doping profile near an epitaxial growth interface on series resistance von Ban, D., Sargent, E.H., Dixon-Warren, St.J., Hinzer, K., White, J.K., SpringThorpe, A.J.

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Oxidation of III–V semiconductors von Graham, M.J., Moisa, S., Sproule, G.I., Wu, X., Landheer, D., SpringThorpe, A.J., Barrios, P., Kleber, S., Schmuki, P.

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Intersubband Raman Laser von Liu, H. C., Cheung, Iva W., SpringThorpe, A. J., Dharma-wardana, C., Wasilewski, Z. R., Lockwood, D. J., Aers, G. C.

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What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes? von Piprek, J., White, J.K., SpringThorpe, A.J.

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Terahertz Quantum Well Photodetectors von Liu, H.C., Hui Luo, Chun-ying Song, Wasilewski, Z.R., SpringThorpe, A.J., Cao, J.C.

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