High-resolution measurements of localized vibrational mode infrared absorption of Si-doped GaAs von THEIS, W. M, SPITZER, W. G

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Direct evidence for the site of substitutional carbon impurity in GaAs von Theis, W. M., Bajaj, K. K., Litton, C. W., Spitzer, W. G.

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Amorphous silicon produced by ion implantation: effects of ion mass and thermal annealing von WADDELL, C. N, SPITZER, W. G, FREDRICKSON, J. E, HUBLER, G. K, KENNEDY, T. A

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Effects of thermal annealing on the refractive index of amorphous silicon produced by ion implantation von Fredrickson, J. E., Waddell, C. N., Spitzer, W. G., Hubler, G. K.

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Infrared study of hydrogen- and carbon-implanted heavily doped, n-type GaAs von LIOU, L. L, SPITZER, W. G, ZAVADA, J. M, JENKINSON, H. A

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High-resolution infrared absorption measurements of Al-doped ZnSe von THEIS, W. M, TALWAR, D. N, VANDEVYVER, M, SPITZER, W. G

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Infrared absorption bands induced by Si-related defects in GaAs: Absorption cross sections von Chen, R. T., Rana, V., Spitzer, W. G.

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Activation of free-charge carriers in Be-implanted GaAs annealed at low temperatures von LIOU, L. L, SPITZER, W. G, FREDRICKSON, J. E, SOOK-IL KWUN

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Amorphous silicon produced by ion implantation. Etching rate in HF solution and effect of annealing von LIOU, L, SPITZER, W. G, PRUSSIN, S

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Solid phase regrowth of low temperature Be-implanted GaAs von SOOK-II KWUN, LEE, M. H, LIOU, L. L, SPITZER, W. G, DUNLAP, H. L, VAIDYANATHAN, K. V

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Si-defect concentrations in heavily Si-doped GaAs: Changes induced by annealing von Kung, J. K., Spitzer, W. G.

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Local-Mode Absorption and Defects in Compensated Silicon-Doped Gallium Arsenide von Spitzer, W. G., Allred, W.

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Low temperature annealing of Be-implanted GaAs von Kwun, Sook-Il, Hong, Chong-Han, Spitzer, W. G.

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Ion-implanted nitrogen in gallium arsenide von Kachare, A. H., Spitzer, W. G., Kahan, A., Euler, F. K., Whatley, T. A.

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The structural characteristics of radiation damage produced by high energy (2.7 MeV) ion implantation in GaAs von Narayanan, G. H., Spitzer, W. G.

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Determination of Fermi-level effect on Si-site distribution in GaAs : Si von Kung, J. K., Spitzer, W. G.

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Refractive index of ion-implanted GaAs von Kachare, A. H., Spitzer, W. G., Fredrickson, J. E.

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Effects of annealing on the carrier concentration of heavily Si-doped GaAs von Kung, J. K., Spitzer, W. G.

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Infrared Refractive Index and Absorption of InAs and CdTe von Lorimor, O. G., Spitzer, W. G.

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Infrared Reflectivity and Free Carrier Absorption of Si-Doped, N-Type GaAs von Kung, J. K., Spitzer, W. G.

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