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  1. 1
    Electrical characteristics of vapor deposited amorphous MoS 2 two‐terminal structures and back gate thin film transistors with Al, Au, Cu and Ni‐Au contacts

    Electrical characteristics of vapor deposited amorphous MoS 2 two‐terminal structures and back gate thin film transistors with Al, Au, Cu and Ni‐Au contacts von Kouvatsos, Dimitrios N., Papadimitropoulos, George, Spiliotis, Thanassis, Vasilopoulou, Maria, Barreca, Davide, Gasparotto, Alberto, Davazoglou, Dimitris

    Veröffentlicht in Physica status solidi. C

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  2. 2
    Electrical characteristics of vapor deposited amorphous MoS sub(2) two-terminal structures and back gate thin film transistors with Al, Au, Cu and Ni-Au contacts

    Electrical characteristics of vapor deposited amorphous MoS sub(2) two-terminal structures and back gate thin film transistors with Al, Au, Cu and Ni-Au contacts von Kouvatsos, Dimitrios N, Papadimitropoulos, George, Spiliotis, Thanassis, Vasilopoulou, Maria, Barreca, Davide, Gasparotto, Alberto, Davazoglou, Dimitris

    Veröffentlicht in Physica status solidi. C

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  3. 3
    Electrical characteristics of vapor deposited amorphous MoS2 two-terminal structures and back gate thin film transistors with Al, Au, Cu and Ni-Au contacts

    Electrical characteristics of vapor deposited amorphous MoS2 two-terminal structures and back gate thin film transistors with Al, Au, Cu and Ni-Au contacts von Kouvatsos, Dimitrios N., Papadimitropoulos, George, Spiliotis, Thanassis, Vasilopoulou, Maria, Barreca, Davide, Gasparotto, Alberto, Davazoglou, Dimitris

    Veröffentlicht in Physica status solidi. C

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