Slow transients observed in AlGaN/GaN HFETs: effects of SiNx passivation and UV illumination von Koley, G, Tilak, V, Eastman, L.F, Spencer, M.G

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Demonstration of a 4H SiC betavoltaic cell von Chandrashekhar, M. V. S., Thomas, Christopher I., Li, Hui, Spencer, M. G., Lal, Amit

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Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy von Koley, G., Spencer, M. G.

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On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface von Koley, G., Spencer, M. G.

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Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices von Vispute, R. D., Talyansky, V., Choopun, S., Sharma, R. P., Venkatesan, T., He, M., Tang, X., Halpern, J. B., Spencer, M. G., Li, Y. X., Salamanca-Riba, L. G., Iliadis, A. A., Jones, K. A.

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Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition von Koley, G., Spencer, M. G.

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Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors von Cha, Ho-Young, Wu, Huaqiang, Chandrashekhar, Mvs, Choi, Y C, Chae, S, Koley, G, Spencer, M G

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Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy von Koley, G., Spencer, M. G., Bhangale, H. R.

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Microwave performance evaluation of diamond surface channel FETs von Kubovic, M., Kasu, M., Kallfass, I., Neuburger, M., Aleksov, A., Koley, G., Spencer, M.G., Kohn, E.

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Modification of Indium Tin Oxide for Improved Hole Injection in Organic Light Emitting Diodes von Shen, Y., Jacobs, D. B., Malliaras, G. G., Koley, G., Spencer, M. G., Ioannidis, A.

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Photoluminescence and cathodoluminescence analyses of GaN powder doped with Eu von Wu, Huaqiang, Poitras, Carl B., Lipson, Michal, Spencer, Michael G., Hunting, Janet, DiSalvo, Francis J.

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Distributions of Conduction Electrons as Manifested in MAS NMR of Gallium Nitride von Yesinowski, James P, Purdy, Andrew P, Wu, Huaqiang, Spencer, Michael G, Hunting, Janet, DiSalvo, Francis J

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Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs von Ho-Young Cha, Thomas, C.I., Koley, G., Eastman, L.F., Spencer, M.G.

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Green emission from Er-doped GaN powder von Wu, Huaqiang, Poitras, Carl B., Lipson, Michal, Spencer, Michael G., Hunting, Janet, DiSalvo, Francis J.

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Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition von Tang, Xiao, Hossain, Fazla, Wongchotigul, Kobchat, Spencer, Michael G.

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High-yield GaN nanowire synthesis and field-effect transistor fabrication von Wu, Huaqiang, Cha, Ho-Young, Chandrashekhar, M., Spencer, Michael G., Koley, Goutam

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Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique von Konkapaka, Phanikumar, Raghothamachar, Balaji, Dudley, Michael, Makarov, Yuri, Spencer, Michael G.

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Hot-phonon temperature and lifetime in biased 4H-SiC von Matulionis, A., Liberis, J., Matulionienė, I., Cha, H.-Y., Eastman, L. F., Spencer, M. G.

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Rapid synthesis of gallium nitride powder von Wu, Huaqiang, Hunting, Janet, Uheda, Kyota, Lepak, Lori, Konkapaka, Phanikumar, DiSalvo, Francis J., Spencer, Michael G.

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Development and characterization of on-chip biopolymer membranes von Mohamed, Hisham, Russo, Anthony P., Szarowski, Donald H., McDonnell, Elizabeth, Lepak, Lori A., Spencer, Michael G., Martin, David L., Caggana, Michele, Turner, James N.

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