Examination of the Thermal and Morphological properties of Spartium Junceum Fibers for Flame Retardant Purposes von Kovacevic, Zorana, Spasevski, Lucia, Bischof, Sandra

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Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN von Kusch, Gunnar, Enslin, Johannes, Spasevski, Lucia, Teke, Tolga, Wernicke, Tim, Edwards, Paul R., Kneissl, Michael, Martin, Robert W.

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Indium incorporation in quaternary In x Al y Ga1−x−y N for UVB-LEDs von Enslin, Johannes, Wernicke, Tim, Lobanova, Anna, Kusch, Gunnar, Spasevski, Lucia, Teke, Tolga, Belde, Bettina, Martin, Robert W, Talalaev, Roman, Kneissl, Michael

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A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content von Spasevski, Lucia, Kusch, Gunnar, Pampili, Pietro, Zubialevich, Vitaly Z, Dinh, Duc V, Bruckbauer, Jochen, Edwards, Paul R, Parbrook, Peter J, Martin, Robert W

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Quantification of Trace-Level Silicon Doping in Al x Ga 1– x N Films Using Wavelength-Dispersive X-Ray Microanalysis von Spasevski, Lucia, Buse, Ben, Edwards, Paul R., Hunter, Daniel A., Enslin, Johannes, Foronda, Humberto M., Wernicke, Tim, Mehnke, Frank, Parbrook, Peter J., Kneissl, Michael, Martin, Robert W.

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Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in In x Al y Ga 1−x−y N von Kusch, Gunnar, Enslin, Johannes, Spasevski, Lucia, Teke, Tolga, Wernicke, Tim, Edwards, Paul R., Kneissl, Michael, Martin, Robert W.

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Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in In x Al y Ga1−x−y N von Kusch, Gunnar, Enslin, Johannes, Spasevski, Lucia, Teke, Tolga, Wernicke, Tim, Edwards, Paul R, Kneissl, Michael, Martin, Robert W

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Indium incorporation in quaternary InxAlyGa1−x−yN for UVB-LEDs von Enslin, Johannes, Wernicke, Tim, Lobanova, Anna, Kusch, Gunnar, Spasevski, Lucia, Teke, Tolga, Belde, Bettina, Martin, Robert W., Talalaev, Roman, Kneissl, Michael

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Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis von Spasevski, Lucia, Buse, Ben, Edwards, Paul R., Hunter, Daniel A., Enslin, Johannes, Foronda, Humberto M., Wernicke, Tim, Mehnke, Frank, Parbrook, Peter J., Kneissl, Michael, Martin, Robert W.

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Indium incorporation in quaternary In x Al y Ga 1− x − y N for UVB-LEDs von Enslin, Johannes, Wernicke, Tim, Lobanova, Anna, Kusch, Gunnar, Spasevski, Lucia, Teke, Tolga, Belde, Bettina, Martin, Robert W., Talalaev, Roman, Kneissl, Michael

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Quantification of Trace-Level Silicon Doping in Al x Ga1-xN Films Using Wavelength-Dispersive X-Ray Microanalysis von Spasevski, Lucia, Buse, Ben, Edwards, Paul R, Hunter, Daniel A, Enslin, Johannes, onda, Humberto M, Wernicke, Tim, Mehnke, Frank, Parbrook, Peter J, Kneissl, Michael, Martin, Robert W

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You Do What in Your Microprobe?! The EPMA as a Multimode Platform for Nitride Semiconductor Characterization von Edwards, Paul R., Naresh-Kumar, G., Kusch, Gunnar, Bruckbauer, Jochen, Spasevski, Lucia, Brasser, Catherine G., Wallace, Michael J., Trager-Cowan, Carol, Martin, Robert W.

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Battery Materials: In-Situ Analysis with the Scanning Electron Microscope von Stavropoulou, Alexandra, Spasevski, Lucia, Lea, Joshua, Schmidt, Ute, Hiscock, Matthew

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A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content von Spasevski, Lucia, Kusch, Gunnar, Pampili, Pietro, Zubialevich, Vitaly Z, Dinh, Duc V, Bruckbauer, Jochen, Edwards, Paul R, Parbrook, Peter J, Martin, Robert W

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Data for: "Quantification of trace-level silicon doping in AlxGa1–xN films using wavelength-dispersive X-ray microanalysis" von Spasevski, Lucia, Martin, Robert, Edwards, Paul, Hunter, Daniel

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Data for: "A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content" von Spasevski, Lucia, Martin, Robert, Bruckbauer, Jochen, Edwards, Paul

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Cathodoluminescence and wavelength-dispersive X-ray measurements of InAlGaN von Kusch, Gunnar, Spasevski, Lucia, Edwards, Paul, Martin, Robert

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Data for: “Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films” von Trager-Cowan, Carol, Alasmari, Aeshah Mushabbab A, Bruckbauer, Jochen, Kusch, Gunnar, Gunasekar, Naresh, Mohammad S, Allehiani, Spasevski, Lucia, Coulon, Pierre-Marie, Winkelmann, Aimo

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