Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6 von Gencarelli, F., Vincent, B., Souriau, L., Richard, O., Vandervorst, W., Loo, R., Caymax, M., Heyns, M.

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Directional Etching of Barrierless NiAl Lines on 300-mm Wafers for Interconnects Applications von Kundu, Souvik, Soulie, J.-P., Marti, G., Okudur, F. U., Kundu, Shreya, Souriau, L., Lazzarino, F., Murdoch, G., Park, S., Tokei, Z.

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BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap von Swerts, J., Mertens, S., Lin, T., Couet, S., Tomczak, Y., Sankaran, K., Pourtois, G., Kim, W., Meersschaut, J., Souriau, L., Radisic, D., Van Elshocht, S., Kar, G., Furnemont, A.

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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance von Brunco, D. P., De Jaeger, B., Eneman, G., Mitard, J., Hellings, G., Satta, A., Terzieva, V., Souriau, L., Leys, F. E., Pourtois, G., Houssa, M., Winderickx, G., Vrancken, E., Sioncke, S., Opsomer, K., Nicholas, G., Caymax, M., Stesmans, A., Van Steenbergen, J., Mertens, P. W., Meuris, M., Heyns, M. M.

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Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance von Tomczak, Y., Swerts, J., Mertens, S., Lin, T., Couet, S., Liu, E., Sankaran, K., Pourtois, G., Kim, W., Souriau, L., Van Elshocht, S., Kar, G., Furnemont, A.

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Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions von Wu, Y. C., Kim, W., Rao, S., Garello, K., Van Beek, S., Couet, S., Liu, E., Swerts, J., Kundu, S., Souriau, L., Yasin, F., Crotti, D., Jochum, J. K., Van Bael, M. J., Van Houdt, J., Groeseneken, G., Kar, G. S.

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A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100) von Wang, G., Loo, R., Simoen, E., Souriau, L., Caymax, M., Heyns, M. M., Blanpain, B.

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Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures von Somers, P., Stesmans, A., Souriau, L., Afanas’ev, V. V.

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High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge von Souriau, L., Terzieva, V., Vandervorst, W., Clemente, F., Brijs, B., Moussa, A., Meuris, M., Loo, R., Caymax, M.

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Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1−x/SiO2 heterostructures investigated by positron annihilation spectroscopy von Madia, O., Segercrantz, N., Afanas'ev, V., Stesmans, A., Souriau, L., Slotte, J., Tuomisto, F.

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Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates von Terzieva, V., Souriau, L., Caymax, M., Brunco, D.P., Moussa, A., Van Elshocht, S., Loo, R., Clemente, F., Satta, A., Meuris, Marc

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Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1−x/SiO2/(100)Si structures with nm-thin GexSi1−x layers von Madia, O., Nguyen, A.P.D., Thoan, N.H., Afanas’ev, V., Stesmans, A., Souriau, L., Slotte, J., Tuomisto, F.

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Electronic properties of Ge dangling bond centers at Si1−xGex/SiO2 interfaces von Afanas’ev, V. V., Houssa, M., Stesmans, A., Souriau, L., Loo, R., Meuris, M.

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Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches von Wang, G., Loo, R., Takeuchi, S., Souriau, L., Lin, J.C., Moussa, A., Bender, H., De Jaeger, B., Ong, P., Lee, W., Meuris, M., Caymax, M., Vandervorst, W., Blanpain, B., Heyns, M.M.

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Characterization of Threading Dislocations in Thin Germanium Layers by Defect Etching: Toward Chromium and HF-Free Solution von Souriau, L., Atanasova, T., Terzieva, V., Moussa, A., Caymax, M., Loo, R., Meuris, M., Vandervorst, W.

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High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning von Loo, R., Wang, G., Souriau, L., Lin, J. C., Takeuchi, S., Brammertz, G., Caymax, M.

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Nanoscale domain wall devices with magnetic tunnel junction read and write von Raymenants, E., Bultynck, O., Wan, D., Devolder, T., Garello, K., Souriau, L., Thiam, A., Tsvetanova, D., Canvel, Y., Nikonov, D. E., Young, I. A., Heyns, M., Soree, B., Asselberghs, I., Radu, I., Couet, S., Nguyen, V. D.

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Modified gradient approach to inverse scattering for binary objects in stratified media von Souriau, L, Duchêne, B, Lesselier, D, Kleinman, R E

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Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions von Wu, Y.C, Kim, W, Rao, S, Garello, K, Van Beek, S, Couet, S, Liu, E, Swerts, J, Kundu, S, Souriau, L, Yasin, F, Crotti, D, Jochum, J.K, Van Bael, M.J, Van Houdt, J, Groeseneken, G, Kar, G.S

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A k-space method for large-scale models of wave propagation in tissue von Mast, T.D., Souriau, L.P., Liu, D.-L.D., Tabei, M., Nachman, A.I., Waag, R.C.

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