Thin films of GeC deposited using a unique hollow cathode sputtering technique von Schrader, J.S., Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J., Exstrom, C.L., Darveau, S.A., Udey, R.N., Dalal, V.L.

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Analysis of semiconductor thin films deposited using a hollow cathode plasma torch von Soukup, R.J., Ianno, N.J., Huguenin-Love, J.L.

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Mathematical Modeling and Computer-Aided Manufacturing of Rough Surfaces for Experimental Study of Seafloor Scattering von Summers, J.E., Soukup, R.J., Gragg, R.F.

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Deposition of high quality amorphous silicon, germanium and silicon-germanium thin films by a hollow cathode reactive sputtering system von Soukup, R.J., Ianno, N.J., Pribil, G., Hubicka, Z.

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Epoxy catalyzed sol–gel method for pinhole-free pyrite FeS2 thin films von Kment, S., Kmentova, H., Sarkar, A., Soukup, R.J., Ianno, N.J., Sekora, D., Olejnicek, J., Ksirova, P., Krysa, J., Remes, Z., Hubicka, Z.

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Formation of CuIn1−xAlxSe2 thin films studied by Raman scattering von Olejníček, J., Kamler, C.A., Darveau, S.A., Exstrom, C.L., Slaymaker, L.E., Vandeventer, A.R., Ianno, N.J., Soukup, R.J.

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A non-vacuum process for preparing nanocrystalline CuIn1-xGaxSe2 materials involving an open-air solvothermal reaction von OLEJNICEK, J, KAMLER, C. A, SOUKUP, R. J, MIRASANO, A, MARTINEZ-SKINNER, A. L, INGERSOLL, M. A, EXSTROM, C. L, DARVEAU, S. A, HUGUENIN-LOVE, J. L, DIAZ, M, IANNO, N. J

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CuIn1―xAlxS2 thin films prepared by sulfurization of metallic precursors von OLEJNICEK, J, FLANNERY, L. E, DARVEAU, S. A, EXSTROM, C. L, KMENT, S, IANNO, Nj, SOUKUP, R. J

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CuIn 1− x Al x S 2 thin films prepared by sulfurization of metallic precursors von Olejníček, J., Flannery, L.E., Darveau, S.A., Exstrom, C.L., Kment, Š., Ianno, N.J., Soukup, R.J.

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Thin films of a-SiGe:H with device quality properties prepared by a novel hollow cathode deposition technique von Soukup, R.J., Ianno, N.J., Darveau, Scott A., Exstrom, Christopher L.

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Thin films formed by selenization of CuIn x B 1− x precursors in Se vapor von Kamler, C.A., Soukup, R.J., Ianno, N.J., Huguenin-Love, J.L., Olejníček, J., Darveau, S.A., Exstrom, C.L.

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A non-vacuum process for preparing nanocrystalline CuIn 1− x Ga x Se 2 materials involving an open-air solvothermal reaction von Olejníček, J., Kamler, C.A., Mirasano, A., Martinez-Skinner, A.L., Ingersoll, M.A., Exstrom, C.L., Darveau, S.A., Huguenin-Love, J.L., Diaz, M., Ianno, N.J., Soukup, R.J.

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Thin films formed by selenization of CuInxB1-x precursors in Se vapor von KAMLER, C. A, SOUKUP, R. J, IANNO, N. J, HUGUENIN-LOVE, J. L, OLEJNICEK, J, DARVEAU, S. A, EXSTROM, C. L

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Investigation of the rf and dc hollow cathode plasma-jet sputtering systems for the deposition of silicon thin films von Hubička, Z., Pribil, G., Soukup, R.J., Ianno, N.J.

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Using spreadsheets to teach problem solving in a first year class von Boye, A.J., Williams, P.F., Soukup, R.J.

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Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering technique von Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J., Schrader, J.S., Thompson, D.W., Dalal, V.L.

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Self organized nanostructures of vapor phase grown CuGaS2 thin films von Prabukanthan, P., Harichandran, G., Soukup, R.J., Ianno, N.J., Exstrom, C.L., Darveau, S.A., Olejnicek, J.

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Germanium nitride layers prepared by supersonic r.f. plasma jet von Soukup, L., Peřina, V., Jastrabík, L., Šícha, M., Pokorný, P., Soukup, R.J., Novák, M., Zemek, J.

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Topography measurement of scale-model representations of the rough ocean bottom by touch-trigger probe and its implications for spectral characterization von Summers, J.E., Gragg, R.F., Soukup, R.J.

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Quality hydrogenated amorphous silicon deposited by triode assisted reactive sputtering von Konz, D.W, Soukup, R.J

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