Indium-free violet LEDs grown by HVPE von Usikov, A. S., Tsvetkov, D. V., Mastro, M. A., Pechnikov, A. I., Soukhoveev, V. A., Shapovalova, Y. V., Kovalenkov, O. V., Gainer, G. H., Karpov, S. Yu, Dmitriev, V. A., O'Meara, B., Gurevich, S. A., Arakcheeva, E. M., Zakhgeim, A. L., Helava, H.

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Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire-based templates von Usikov, A. S., Kim, Dae-Woo, Pechnikov, A. I., Ruban, Yu. V., Mastro, M. A., Melnik, Yu, Soukhoveev, V. A., Shapovalova, Y. V., Kovalenkov, O. V., Gainer, G. H., Mahajan, S., Dmitriev, V. A.

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Growth and Characterization of LED Structures Grown by MOCVD on HVPE-Grown GaN Templates von Usikov, A.S., Lundin, W.V., Zavarin, E.E., Besulkin, A.I., Shmidt, N.M., Pechnikov, A.I., Shapovalova, Y., Soukhoveev, V.A., Gainer, G.H.

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Thick AlN layers grown by HVPE von Kovalenkov, O., Soukhoveev, V., Ivantsov, V., Usikov, A., Dmitriev, V.

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The influence of phonons on the optical properties of GaN von Song, D. Y., Basavaraj, M., Nikishin, S. A., Holtz, M., Soukhoveev, V., Usikov, A., Dmitriev, V.

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Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE von Usikov, A., Kovalenkov, O., Soukhoveev, V., Ivantsov, V., Syrkin, A., Dmitriev, V., Nikiforov, A. Yu, Sundaresan, S. G., Jeliazkov, S. J., Davydov, A. V.

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Decay of zone-center phonons in GaN with A1, E1, and E2 symmetries von Song, D. Y., Nikishin, S. A., Holtz, M., Soukhoveev, V., Usikov, A., Dmitriev, V.

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Recent results on AlN growth by HVPE and fabrication of free standing AlN wafers von Soukhoveev, V., Kovalenkov, O., Ivantsov, V., Syrkin, A., Usikov, A., Maslennikov, V., Dmitriev, V.

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Layer thickness dependent carrier recombination rate in HVPE GaN von Jarašiūnas, Kęstutis, Malinauskas, Tadas, Nargelas, Saulius, Gudelis, Vytautas, Vaitkus, Juozas V., Soukhoveev, Vitali, Usikov, Alexander

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New results on HVPE growth of AlN, GaN, InN and their alloys von Usikov, A., Soukhoveev, V., Shapovalova, L., Syrkin, A., Kovalenkov, O., Volkova, A., Sizov, V., Ivantsov, V., Dmitriev, V.

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AlN substrates: fabrication via vapor phase growth and characterization von Melnik, Yu, Soukhoveev, V., Ivantsov, V., Sizov, V., Pechnikov, A., Tsvetkov, K., Kovalenkov, O., Dmitriev, V., Nikolaev, A., Kuznetsov, N., Silveira, E., Freitas Jr, J.

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Decay of zone-center phonons in GaN with A1, E1, and E2 symmetries von Dmitriev, V, Usikov, A, Soukhoveev, V, Holtz, M, Nikishin, S.A, Song, D.Y

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Decay of zone-center phonons in GaN with A 1 , E 1 , and E 2 symmetries von Song, D. Y., Nikishin, S. A., Holtz, M., Soukhoveev, V., Usikov, A., Dmitriev, V.

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AlGaN epitaxial layers grown by HVPE on sapphire substrates von Soukhoveev, V., Kovalenkov, O., Shapovalova, L., Ivantsov, V., Usikov, A., Dmitriev, V., Davydov, V., Smirnov, A.

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Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors von Mastro, M.A., Tsvetkov, D., Soukhoveev, V., Usikov, A., Dmitriev, V., Luo, B., Ren, F., Baik, K.H., Pearton, S.J.

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InN-based layers grown by modified HVPE von Syrkin, A., Usikov, A., Soukhoveev, V., Kovalenkov, O., Ivantsov, V., Dmitriev, V., Collins, C., Readinger, E., Shmidt, N., Davydov, V., Nikishin, S., Kuryatkov, V., Song, D., Rosenbladt, D., Holtz, Mark

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4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues von Soukhoveev, V., Hallin, Christer, Kakanakov, Roumen, Janzén, Erik, Mynbaeva, Marina G., Dmitriev, Vladimir, Syrkin, Alexander

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RF performance of HVPE-grown AlGaN/GaN HEMTs von Mastro, M.A., Tsvetkov, D., Soukhoveev, V., Usikov, A., Dmitriev, V., Luo, B., Ren, F., Baik, K.H., Pearton, S.J.

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GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates von LaRoche, J.R., Luo, B., Ren, F., Baik, K.H., Stodilka, D., Gila, B., Abernathy, C.R., Pearton, S.J., Usikov, A., Tsvetkov, D., Soukhoveev, V., Gainer, G., Rechnikov, A., Dimitriev, V., Chen, G.-T., Pan, C.-C., Chyi, J.-I.

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Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities von Garrett, G. A., Sampath, A.V., Collins, C. J., Readinger, E. D., Sarney, W. L., Shen, H., Wraback, M., Soukhoveev, V., Usikov, A., Dmitriev, V.

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