Polarized photoluminescence of nc-Si-Si[O.sub.x] nanostructures von Michailovska, E.V, Indutnyi, I.Z, Shepeliavyi, P.E, Sopinskii, N.V

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Effect of erbium fluoride doping on the photoluminescence of Si[O.sub.x] films von Vlasenko, N.A, Sopinskii, N.V, Gule, E.G, Strelchuk, V.V, Oleksenko, P.F, Veligura, L.I, Nikolenko, A.S, Mukhlyo, M.A

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Specific features and nature of the 890 nm photoluminescence band detected in Si[O.sub.x] films after low-temperature annealing von Vlasenko, N.A, Sopinskii, N.V, Gule, E.G, Manoilov, E.G, Oleksenko, P.F, Veligura, L.I, Mukhlyo, M.A

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Erratum: "electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films" [semiconductors 45, 587 ] von Vlasenko, N.A, Oleksenko, P.F, Denisova, Z.L, Sopinskii, N.V, Veligura, L.I, Gule, E.G, Litvin, O.S, Mukhlyo, M.A

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Electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films von Vlasenko, N.A, Oleksenko, P.F, Denisova, Z.L, Sopinskii, N.V, Veligura, L.I, Gule, E.G, Litvin, O.S, Mukhlyo, M.A

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Properties of low-refractive-index films obtained by the close-spaced vapor transport technique under the sublimation of graphite in a quasi-closed volume von Sopinskii, N. V., Khomchenko, V. S., Litvin, O. S., Savin, A. K., Semenenko, N. A., Evtukh, A. A., Sobolevskii, V. P., Ol’khovik, G. P.

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