Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film von Kim, Min-Jin, Kim, Cheol-Jun, Kang, Bo-Soo

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Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance von Kim, Jae-Jun, Chul Chun, Min, Hee Jin, Da, Ahn, Seung-Eon, Soo Kang, Bo

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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory von Lee, M.-J., Park, Y., Suh, D.-S., Lee, E.-H., Seo, S., Kim, D.-C., Jung, R., Kang, B.-S., Ahn, S.-E., Lee, C. B., Seo, D. H., Cha, Y.-K., Yoo, I.-K., Kim, J.-S., Park, B. H.

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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory von Lee, Myoung-Jae, Han, Seungwu, Jeon, Sang Ho, Park, Bae Ho, Kang, Bo Soo, Ahn, Seung-Eon, Kim, Ki Hwan, Lee, Chang Bum, Kim, Chang Jung, Yoo, In-Kyeong, Seo, David H, Li, Xiang-Shu, Park, Jong-Bong, Lee, Jung-Hyun, Park, Youngsoo

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Pulse program for improving learning accuracy and reducing programming energy consumption of ferroelectric synaptic transistor von Lee, Jae Yeob, Kim, Cheol Jun, Ku, Minkyung, Kim, Tae Hoon, Noh, Taehee, Lee, Seung Won, Shin, Yoonchul, Ahn, Ji-Hoon, Kang, Bo Soo

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Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure von Hwang, Inrok, Lee, Myung-Jae, Buh, Gyoung-Ho, Bae, Jieun, Choi, Jinsik, Kim, Jin-Soo, Hong, Sahwan, Kim, Yeon Soo, Byun, Ik-Su, Lee, Seung-Woong, Ahn, Seung-Eon, Kang, Bo Soo, Kang, Sung-Oong, Park, Bae Ho

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Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing von Kim, Cheol Jun, Lee, Jae Yeob, Ku, Minkyung, Kim, Tae Hoon, Noh, Taehee, Lee, Seung Won, Ahn, Ji‐Hoon, Kang, Bo Soo

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Highly reliable bipolar resistive switching of tantalum oxide-based memory using Al2O3 diffusion barrier layers von Lee, Seung Ryul, Kang, Bo Soo

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Roles of the first atomic layers in growth of SrTiO3 films on LaAlO3 substrates von Kim, Dong-Wook, Kim, Dae-Ho, Kang, Bo-Soo, Noh, T. W., Lee, D. R., Lee, K.-B.

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Forming process of unipolar resistance switching in Ta2O5−x thin films von Lee, Shin Buhm, Yoo, Hyang Keun, Kang, Bo Soo

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Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process von Na, Sang-Chul, Chun, Min Chul, Jang, Gyuyeon, Shin, Hyejin, Kwon, Young-Sun, Kang, Bo Soo, Lee, Keundong, Yoon, Chansoo, Park, Bae Ho

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Mobility Enhanced Photoactivity in Sol−Gel Grown Epitaxial Anatase TiO2 Films von Jung, Hyun Suk, Lee, Jung-Kun, Lee, Jaegab, Kang, Bo Soo, Jia, Quanxi, Nastasi, Michael, Noh, Jun Hong, Cho, Chin-Moo, Yoon, Sung Hoon

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Strain Relaxation in Sol−Gel Grown Epitaxial Anatase Thin Films von Jung, Hyun Suk, Lee, Jung-Kun, Lee, Jaegab, Kang, Bo Soo, Jia, Quanxi, Nastasi, Michael

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Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching von Yoo, In Kyeong, Kang, Bo Soo, Ahn, Seung Eon, Lee, Chang Bum, Lee, Myoung Jae, Park, Gyeong-Su, Li, Xiang-Shu

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Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory von Ahn, Seung-Eon, Lee, Myoung-Jae, Kang, Bo Soo, Lee, Dongsoo, Kim, Chang-Jung, Kim, Dong-Sik, Chung, U-In

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Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change von Ki Hwan Kim, Bo Soo Kang, Myoung-Jae Lee, Seung-Eon Ahn, Chang Bum Lee, Stefanovich, G., Wen Xu Xianyu, Chang Jung Kim, Youngsoo Park

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Stackable All-Oxide-Based Nonvolatile Memory With Al2O3 Antifuse and p-CuOx/n-InZnOx Diode von AHN, Seung-Eon, BO SOO KANG, KI HWAN KIM, LEE, Myoung-Jae, CHANG BUM LEE, STEFANOVICH, Genrikh, CHANG JUNG KIM, PARK, Youngsoo

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Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy von Lee, Dongyun, Chun, Min Chul, Ko, Hyungduk, Kang, Bo Soo, Kim, Jaekyun

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Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime von Cho, Yongjun, Kang, Bo Soo, Kumbhare, Pankaj, Delhougne, Romain, Nyns, Laura, Mao, Ming, Goux, Ludovic, Kar, Gouri Sankar, Belmonte, Attilio

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Polarization switching dynamics simulation by using the practical distribution of ferroelectric properties von Kim, Cheol Jun, Lee, Jae Yeob, Ku, Minkyung, Lee, Seung Won, Ahn, Ji-Hoon, Kang, Bo Soo

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