Highly efficient acoustic absorber designed by backing cavity-like and filled-microperforated plate-like structure von Qi, Lize, Zhi, Chao, Meng, Jiaguang, Wang, Yongzhen, Liu, Yaming, Song, Qingwen, Wu, Qian, Wei, Liang, Dai, Yang, Zou, Jing, Miao, Menghe, Yu, Lingjie

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Impact of High-Temperature Storage Stressing (HTSS) on Degradation of High-Voltage 4H-SiC Junction Barrier Schottky Diodes von Yang, Shuai, Zhang, Yuming, Song, Qingwen, Tang, Xiaoyan, Zhang, Yimeng, Yuan, Lei, Zhang, Yimen

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Gate driver for parallel connection SiC MOSFETs with over-current protection and dynamic current balancing scheme von Zhang, Yimeng, Song, Qingwen, Tang, Xiaoyan, Zhang, Yuming

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An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes von Chao Han, Yuming Zhang, Qingwen Song, Yimen Zhang, Xiaoyan Tang, Fei Yang, Yingxi Niu

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Corrigendum to “Highly efficient acoustic absorber designed by backing cavity-like and filled-microperforated plate-like structure” [Mater. Design 225 (2023) 111484] von Qi, Lize, Zhi, Chao, Meng, Jiaguang, Wang, Yongzhen, Liu, Yaming, Song, Qingwen, Wu, Qian, Wei, Liang, Dai, Yang, Zou, Jing, Miao, Menghe, Yu, Lingjie

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Flow and heat transfer behaviors of phase change material slurries in a horizontal circular tube von Wang, Xichun, Niu, Jianlei, Li, Yi, Wang, Xin, Chen, Binjiao, Zeng, Ruolang, Song, Qingwen, Zhang, Yinping

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A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss von Liu, Sicheng, Tang, Xiaoyan, Song, Qingwen, Wang, Yuehu, Bai, Ruijie, Zhang, Yimen, Zhang, Yuming

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Thermal stability of composite phase change material microcapsules incorporated with silver nano-particles von Song, Qingwen, Li, Yi, Xing, Jianwei, Hu, J.Y., Marcus, Yuen

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Enhanced Photocatalytic Properties of PET Filaments Coated with Ag-N Co-Doped TiO2 Nanoparticles Sensitized with Disperse Blue Dyes von Zhang, Hui, Tang, Qi, Li, Qingshan, Song, Qingwen, Wu, Hailiang, Mao, Ningtao

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Flexible unimodal strain sensors for human motion detection and differentiation von Jin, Lu, Li, Zhenhong, Liu, Zekun, Richardson, Bethany, Zheng, Yan, Xu, Lulu, Chen, Zhongda, Zhai, Heng, Kim, Hongdoo, Song, Qingwen, Yue, Pengfei, Xie, Sheng Quan, Kim, Kap Jin, Li, Yi

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Enhancing the UV Response of All-Inorganic Perovskite Photodetectors by Introducing the Mist-CVD-Grown Gallium Oxide Layer von Zhang, Zeyulin, Ba, Yanshuang, Chen, Dazheng, Yan, Pengru, Song, Qingwen, Zhang, Yuming, Zhu, Weidong, Zhang, Chunfu, Hao, Yue

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Trench Multiple Floating Limiting Rings Termination for 4H-SiC High-Voltage Devices von Yuan, Hao, Song, Qingwen, Tang, Xiaoyan, Yuan, Lei, Yang, Shuai, Tang, Guannan, Zhang, Yimen, Zhang, Yuming

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Investigation of SiC trench MOSFET with floating islands von Qingwen, Song, Xiaoyan, Tang, Yimeng, Zhang, Yuming, Zhang, Yimen, Zhang

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Unveil the Full Potential of Integrated-Back-Contact Perovskite Solar Cells Using Numerical Simulation von Ma, Teng, Song, Qingwen, Tadaki, Daisuke, Niwano, Michio, Hirano-Iwata, Ayumi

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Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics von Li, Dongxun, Zhang, Yuming, Tang, Xiaoyan, He, Yanjing, Song, Qingwen, Zhang, Yimen

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Heat transfer of microencapsulated PCM slurry flow in a circular tube von Wang, Xichun, Niu, Jianlei, Li, Yi, Zhang, Yinping, Wang, Xin, Chen, Binjiao, Zeng, Ruolang, Song, Qingwen

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Novel modulation method for torque ripple suppression of brushless DC motors based on SIMO DC–DC converter von Sun, Shikai, Guo, Hui, Zhang, Yimeng, Jia, Yupeng, Lv, Hongliang, Song, Qingwen, Tang, Xiaoyan, Zhang, Yuming

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Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes von Yuan, Hao, Wang, Chengsen, Tang, Xiaoyan, Song, Qingwen, He, Yanjing, Zhang, Yimen, Zhang, Yuming, Xiao, Li, Wang, Liangyong, Wu, Yong

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Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms von Li, Dongxun, Zhang, Yuming, Tang, Xiaoyan, He, Yanjing, Yuan, Hao, Jia, Yifan, Song, Qingwen, Zhang, Ming, Zhang, Yimen

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Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes von Yuan, Hao, Tang, Xiaoyan, Song, Qingwen, Zhang, Yimen, Zhang, Yuming, Yang, Fei, Niu, Yingxi

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