Interface Trap-Induced Nonideality in As-Deposited Ni/4H-SiC Schottky Barrier Diode von Omar, Sabih Uddin, Sudarshan, Tangali S., Rana, Tawhid A., Haizheng Song, Chandrashekhar, M. V. S.

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Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4° off-axis 4H–SiC von Song, Haizheng, Sudarshan, Tangali S.

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Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth von Abadier, Mina, Song, Haizheng, Sudarshan, Tangali S., Picard, Yoosuf N., Skowronski, Marek

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Basal Plane Dislocation Mitigation in SiC Epitaxial Growth by Nondestructive Substrate Treatment von Song, Haizheng, Sudarshan, Tangali S

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Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers von Song, Haizheng, Rana, Tawhid, Sudarshan, Tangali S.

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Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique von Song, Haizheng, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro

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Decomposition Behavior of M(DPM) n (DPM = 2,2,6,6-Tetramethyl-3,5-heptanedionato; n = 2, 3, 4) von Jiang, Yinzhu, Liu, Mingfei, Wang, Yanyan, Song, Haizheng, Gao, Jianfeng, Meng, Guangyao

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Evaluation of a novel unfluorinated copper precursor for chemical vapor deposition von Song, Haizheng, Norman, John A.T., Shimogaki, Yukihiro

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Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism von Song, Haizheng, Im, Ik-Tae, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro

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Non-linear surface reaction kinetics in GaAs selective area MOVPE von Song, Haizheng, Wang, Yunpeng, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro

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Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4ADG off-axis 4HaSiC von Song, Haizheng, Sudarshan, Tangali

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Deposition of Sm2O3 doped CeO2 thin films from Ce(DPM)4 and Sm(DPM)3 (DPM=2,2,6,6-tetramethyl-3,5-heptanedionato) by aerosol-assisted metal-organic chemical vapor deposition von Jiang, Yinzhu, Song, Haizheng, Ma, Qianli, Meng, Guangyao

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Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique von Wang, Yunpeng, Song, Haizheng, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro

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Nonlinear Kinetic Analysis of InP and InAs Metal Organic Vapor Phase Epitaxy by Selective Area Growth Technique von Wang, Yunpeng, Song, Haizheng, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro

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Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique von Wang, Yunpeng, Song, Haizheng, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro

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Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (1 0 0) exact and misoriented substrate von Song, Haizheng, Song, Xueliang, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro

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Reactor-scale uniformity of selective-area performance in InGaAsP system von Onitsuka, Ryusuke, Shioda, Tomonari, Song, Haizheng, Sugiyama, Masakazu, Shimogaki, Yukihiro, Nakano, Yoshiaki

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Synthesis and characterization of Sm(DPM) 3 used as precursor for MOCVD von Jiang, Yinzhu, Song, Haizheng, Li, Ling, Bao, Weitao, Meng, Guangyao

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Preparation of Gd2O3 doped CeO2 thin films by oxy-acetylene combustion assisted aerosol-chemical vapor deposition technique on various substrates and zone model for microstructure von Song, Haizheng, Xia, Changrong, Meng, Guangyao, Peng, Dingkun

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4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth von Balachandran, Anusha, Song, Haizheng, Sudarshan, T.S., Chandrashekhar, M.V.S.

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