Nanotechnology for a Sustainable Future: Addressing Global Challenges with the International Network4Sustainable Nanotechnology von Pokrajac, Lisa, Abbas, Ali, Chrzanowski, Wojciech, Dias, Goretty M, Eggleton, Benjamin J, Maguire, Steven, Maine, Elicia, Malloy, Timothy, Nathwani, Jatin, Nazar, Linda, Sips, Adrienne, Sone, Jun’ichi, van den Berg, Albert, Weiss, Paul S, Mitra, Sushanta

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Proposal of Pseudo source and drain MOSFETs for evaluating 10-nm gate MOSFETs von KAWAURA, H, SAKAMOTO, T, BABA, T, OCHIAI, Y, FUJITA, J, MATSUI, S, SONE, J

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Sensor Fusion Technologies in IoT Era von Sone, Jun'ichi

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Numerical studies on quantum transport in antidot arrays in magnetic fields von ISHIZAKA, S, NIHEY, F, NAKAMURA, K, SONE, J, ANDO, T

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High-gain collector-top Ge/GaAs heterojunction bipolar transistors with a base layer fabricated by suppressing Ga atom diffusion at Ge/GaAs heterojunctions von KAWANAKA, M, KUMURA, T, SONE, J

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Current-voltage characteristics of p-Ge/n-GaAs heterojunction diodes grown by molecular beam epitaxy von KAWANAKA, M, JUN'ICHI SONE

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Transistor characteristics of 14-nm-gate-length EJ-MOSFETs von Kawaura, H., Sakamoto, T., Baba, T., Ochiai, Y., Fujita, J., Sone, J.

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IoT時代のセンサ融合基盤技術 von 曽根, 純一

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Transistor operation of 30-nm gate-length EJ-MOSFETs von Hawaura, H., Sakamoto, T., Baba, T., Ochiai, Y., Fujita, J., Matsui, S., Sone, J.

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K-Band High-Power GaAs FET Amplifiers von Jun'ichi Sone, Takayama, Y.

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Panel discussion von Wakabayashi, Hitoshi, Onda, Yosuke, Takao, Hidekuni, Sawada, Kazuaki, Ito, Hiroyuki, Muroyama, Masanori, Tanaka, Takahisa, Sone, Jun'ichi

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Tunneling of quasiparticles in the normal-insulator-superconductor-insulator-normal geometry von HIDAKA, M, ISHIZAKA, S, SONE, J.'I

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112-GHz collector-up Ge/GaAs heterojunction bipolar transistors with low turn-on voltage von Kawanaka, M., Iguchi, N., Sone, J.

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Doping properties of Ge on GaAs (100) grown by MBE von Kawanaka, Masafumi, Sone, Jun'ichi

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Turn-on delay analysis of current-injection Josephson logic circuits von SONE, J

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Current-voltage characteristics ofp-Ge/n-GaAs heterojunction diodes grown by molecular beam epitaxy von Kawanaka, Masafumi, Sone, Jun’ichi

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Current-injection Josephson latch employing a single-flux quantum. II von YAMADA, T, SONE, J

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Nano-Scale Thermal Management for Device Innovation von Baba, Toshio, Saito, Hiroaki, Sato, Katsuaki, Nagano, Toshiki, Matsushita, Nobuhiro, Matoba, Masanori, Sone, Jun’ichi

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Current-injection Josephson latch employing a single-flux quantum. I von SONE, J, YAMADA, T

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dc Josephson current through a quantum dot coupled with superconducting leads von Ishizaka, S, Sone, J, Ando, T

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