Vertical Transistors Based on 2D Materials: Status and Prospects von Giannazzo, Filippo, Greco, Giuseppe, Roccaforte, Fabrizio, Sonde, Sushant

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Improved contact resistance in ReSe2 thin film field-effect transistors von Corbet, Chris M., Sonde, Sushant S., Tutuc, Emanuel, Banerjee, Sanjay K.

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Characterization and sonochemical synthesis of black phosphorus from red phosphorus von Aldave, Sandra H, Yogeesh, Maruthi N, Zhu, Weinan, Kim, Joonseok, Sonde, Sushant S, Nayak, Avinash P, Akinwande, Deji

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Integration of 2D Materials for Electronics Applications von Avila, Samuel, Eriksson, Jens, Sonde, Sushant, Giannazzo, Filippo

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Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides von Ge, Ruijing, Wu, Xiaohan, Kim, Myungsoo, Shi, Jianping, Sonde, Sushant, Tao, Li, Zhang, Yanfeng, Lee, Jack C, Akinwande, Deji

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Ion irradiation and defect formation in single layer graphene von Compagnini, Giuseppe, Giannazzo, Filippo, Sonde, Sushant, Raineri, Vito, Rimini, Emanuele

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Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation von Rai, Amritesh, Valsaraj, Amithraj, Movva, Hema C.P, Roy, Anupam, Ghosh, Rudresh, Sonde, Sushant, Kang, Sangwoo, Chang, Jiwon, Trivedi, Tanuj, Dey, Rik, Guchhait, Samaresh, Larentis, Stefano, Register, Leonard F, Tutuc, Emanuel, Banerjee, Sanjay K

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Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator von Zhu, Weinan, Yogeesh, Maruthi N, Yang, Shixuan, Aldave, Sandra H, Kim, Joon-Seok, Sonde, Sushant, Tao, Li, Lu, Nanshu, Akinwande, Deji

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Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2 von Corbet, Chris M, McClellan, Connor, Rai, Amritesh, Sonde, Sushant Sudam, Tutuc, Emanuel, Banerjee, Sanjay K

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Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 von Dey, Rik, Pramanik, Tanmoy, Roy, Anupam, Rai, Amritesh, Guchhait, Samaresh, Sonde, Sushant, Movva, Hema C. P., Colombo, Luigi, Register, Leonard F., Banerjee, Sanjay K.

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Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy von Roy, Anupam, Guchhait, Samaresh, Sonde, Sushant, Dey, Rik, Pramanik, Tanmoy, Rai, Amritesh, Movva, Hema C. P., Colombo, Luigi, Banerjee, Sanjay K.

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Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators von Trivedi, Tanuj, Sonde, Sushant, Movva, Hema C. P., Banerjee, Sanjay K.

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Infrared MBE-Grown HgCdTe Focal Plane Arrays and Cameras After High Energy Neutron Irradiation von Chang, Yong, Velicu, Silviu, Sonde, Sushant, Kroc, Thomas

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Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene von Giannazzo, Filippo, Sonde, Sushant, Nigro, Raffaella Lo, Rimini, Emanuele, Raineri, Vito

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Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit von Dey, Rik, Roy, Anupam, Pramanik, Tanmoy, Guchhait, Samaresh, Sonde, Sushant, Rai, Amritesh, Register, Leonard F., Banerjee, Sanjay K.

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Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment von Chowdhury, Sk. Fahad, Sonde, Sushant, Rahimi, Somayyeh, Tao, Li, Banerjee, Sanjay, Akinwande, Deji

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Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device von Koh, Donghyi, Shin, Seung Heon, Ahn, Jaehyun, Sonde, Sushant, Kwon, Hyuk-Min, Orzali, Tommaso, Kim, Dae-Hyun, Kim, Tae-Woo, Banerjee, Sanjay K.

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Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001) von Vecchio, Carmelo, Sonde, Sushant, Bongiorno, Corrado, Rambach, Martin, Yakimova, Rositza, Raineri, Vito, Giannazzo, Filippo

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Silicon compatible Sn-based resistive switching memory von Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E, Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K R S, Datta, Suman, Guha, Supratik

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Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms von Corbet, Chris M, McClellan, Connor, Kim, Kyounghwan, Sonde, Sushant, Tutuc, Emanuel, Banerjee, Sanjay K

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