Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence von Babin, Charles, Stöhr, Rainer, Morioka, Naoya, Linkewitz, Tobias, Steidl, Timo, Wörnle, Raphael, Liu, Di, Hesselmeier, Erik, Vorobyov, Vadim, Denisenko, Andrej, Hentschel, Mario, Gobert, Christian, Berwian, Patrick, Astakhov, Georgy V., Knolle, Wolfgang, Majety, Sridhar, Saha, Pranta, Radulaski, Marina, Son, Nguyen Tien, Ul-Hassan, Jawad, Kaiser, Florian, Wrachtrup, Jörg

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Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3 von Son, Nguyen Tien, Ho, Quoc Duy, Goto, Ken, Abe, Hiroshi, Ohshima, Takeshi, Monemar, Bo, Kumagai, Yoshinao, Frauenheim, Thomas, Deák, Peter

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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide von Nagy, Roland, Niethammer, Matthias, Widmann, Matthias, Chen, Yu-Chen, Udvarhelyi, Péter, Bonato, Cristian, Hassan, Jawad Ul, Karhu, Robin, Ivanov, Ivan G., Son, Nguyen Tien, Maze, Jeronimo R., Ohshima, Takeshi, Soykal, Öney O., Gali, Ádám, Lee, Sang-Yun, Kaiser, Florian, Wrachtrup, Jörg

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Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions von Niethammer, Matthias, Widmann, Matthias, Rendler, Torsten, Morioka, Naoya, Chen, Yu-Chen, Stöhr, Rainer, Hassan, Jawad Ul, Onoda, Shinobu, Ohshima, Takeshi, Lee, Sang-Yun, Mukherjee, Amlan, Isoya, Junichi, Son, Nguyen Tien, Wrachtrup, Jörg

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Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide von Morioka, Naoya, Babin, Charles, Nagy, Roland, Gediz, Izel, Hesselmeier, Erik, Liu, Di, Joliffe, Matthew, Niethammer, Matthias, Dasari, Durga, Vorobyov, Vadim, Kolesov, Roman, Stöhr, Rainer, Ul-Hassan, Jawad, Son, Nguyen Tien, Ohshima, Takeshi, Udvarhelyi, Péter, Thiering, Gergő, Gali, Adam, Wrachtrup, Jörg, Kaiser, Florian

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Bright single photon sources in lateral silicon carbide light emitting diodes von Widmann, Matthias, Niethammer, Matthias, Makino, Takahiro, Rendler, Torsten, Lasse, Stefan, Ohshima, Takeshi, Ul Hassan, Jawad, Tien Son, Nguyen, Lee, Sang-Yun, Wrachtrup, Jörg

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Coherent control of single spins in silicon carbide at room temperature von Widmann, Matthias, Lee, Sang-Yun, Rendler, Torsten, Son, Nguyen Tien, Fedder, Helmut, Paik, Seoyoung, Yang, Li-Ping, Zhao, Nan, Yang, Sen, Booker, Ian, Denisenko, Andrej, Jamali, Mohammad, Momenzadeh, S. Ali, Gerhardt, Ilja, Ohshima, Takeshi, Gali, Adam, Janzén, Erik, Wrachtrup, Jörg

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Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC von Son, Nguyen Tien, Stenberg, Pontus, Jokubavicius, Valdas, Abe, Hiroshi, Ohshima, Takeshi, Ul Hassan, Jawad, Ivanov, Ivan G.

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Narrow inhomogeneous distribution of spin-active emitters in silicon carbide von Nagy, Roland, Dasari, Durga Bhaktavatsala Rao, Babin, Charles, Liu, Di, Vorobyov, Vadim, Niethammer, Matthias, Widmann, Matthias, Linkewitz, Tobias, Gediz, Izel, Stöhr, Rainer, Weber, Heiko B., Ohshima, Takeshi, Ghezellou, Misagh, Son, Nguyen Tien, Ul-Hassan, Jawad, Kaiser, Florian, Wrachtrup, Jörg

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Deep levels related to the carbon antisite–vacancy pair in 4H-SiC von Nakane, Hiroki, Kato, Masashi, Ohkouchi, Yutaro, Trinh, Xuan Thang, Ivanov, Ivan G., Ohshima, Takeshi, Son, Nguyen Tien

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Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device von Widmann, Matthias, Niethammer, Matthias, Fedyanin, Dmitry Yu, Khramtsov, Igor A, Rendler, Torsten, Booker, Ian D, Ul Hassan, Jawad, Morioka, Naoya, Chen, Yu-Chen, Ivanov, Ivan G, Son, Nguyen Tien, Ohshima, Takeshi, Bockstedte, Michel, Gali, Adam, Bonato, Cristian, Lee, Sang-Yun, Wrachtrup, Jörg

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Electronic properties of Si-doped AlxGa1−xN with aluminum mole fractions above 80 von Mehnke Frank, Trinh, Xuan Thang, Pingel Harald, Wernicke, Tim, Janzén Erik, Son Nguyen Tien

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Stabilization of point-defect spin qubits by quantum wells von Ivády, Viktor, Davidsson, Joel, Delegan, Nazar, Falk, Abram L., Klimov, Paul V., Whiteley, Samuel J., Hruszkewycz, Stephan O., Holt, Martin V., Heremans, F. Joseph, Son, Nguyen Tien, Awschalom, David D., Abrikosov, Igor A., Gali, Adam

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Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide von Cilibrizzi, Pasquale, Arshad, Muhammad Junaid, Tissot, Benedikt, Son, Nguyen Tien, Ivanov, Ivan G., Astner, Thomas, Koller, Philipp, Ghezellou, Misagh, Ul-Hassan, Jawad, White, Daniel, Bekker, Christiaan, Burkard, Guido, Trupke, Michael, Bonato, Cristian

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Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC von Udvarhelyi, Peter, Thiering, Gergo, Morioka, Naoya, Babin, Charles, Kaiser, Florian, Lukin, Daniil, Ohshima, Takeshi, Ul-Hassan, Jawad, Nguyen, Son Tien, Vuckovic, Jelena, Wrachtrup, Jorg, Gali, Adam

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Spectrally reconfigurable quantum emitters enabled by optimized fast modulation von Lukin, Daniil M., White, Alexander D., Trivedi, Rahul, Guidry, Melissa A., Morioka, Naoya, Babin, Charles, Soykal, Öney O., Ul-Hassan, Jawad, Son, Nguyen Tien, Ohshima, Takeshi, Vasireddy, Praful K., Nasr, Mamdouh H., Sun, Shuo, MacLean, Jean-Philippe W., Dory, Constantin, Nanni, Emilio A., Wrachtrup, Jörg, Kaiser, Florian, Vučković, Jelena

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Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions von Niethammer, Matthias, Widmann, Matthias, Lee, Sang-Yun, Stenberg, Pontus, Kordina, Olle, Ohshima, Takeshi, Nguyen, Son Tien, Janzén, Erik, Wrachtrup, Joerg

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Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide von Nagy, Roland, Widmann, Matthias, Niethammer, Matthias, Dasari, Durga B. R., Gerhardt, Ilja, Soykal, Öney O., Radulaski, Marina, Ohshima, Takeshi, Vučković, Jelena, Son, Nguyen Tien, Ivanov, Ivan G., Economou, Sophia E., Bonato, Cristian, Lee, Sang-Yun, Wrachtrup, Jörg

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Ligand hyperfine interactions at silicon vacancies in 4H-SiC von Son, Nguyen Tien, Stenberg, Pontus, Jokubavicius, Valdas, Ohshima, Takeshi, Ul Hassan, Jawad, Ivanov, Ivan G

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Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance von Kawahara, Koutarou, Thang Trinh, Xuan, Tien Son, Nguyen, Janzén, Erik, Suda, Jun, Kimoto, Tsunenobu

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