Characterization of MONOS nonvolatile memory by solid phase crystallization on glass von Jin, Zhenghai, Jung, Sungwook, Van Duy, Nguyen, Hwang, Sunghyun, Jang, Kyungsoo, Lee, Kwangsoo, Lee, Jungin, Hyungjun, Park, Kim, Jaehon, Son, Hyukjoo, Yi, Junsin

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Memory Characteristics of MNNOS Capacitors with Various Energy Band Gaps of Silicon Nitride von Son, Hyukjoo, Lee, Youn-Jung, Jung, Sungwook, Jang, Kyungsoo, Kim, Jaehong, Cho, Jaehyun, Heo, Jongkyu, Kim, Byung-Sung, Yi, Junsin

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Programming and Erasing Operations of Nitride-Nitride-Oxynitride Stacked Thin Film Transistor Device von Kim, Doyoung, Son, Hyukjoo, Jung, Sungwook, Jang, Kyungsoo, Pillai, Krishnakumar, Kim, Hyungjun, Yi, Junsin

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Embedded LTPS flash cells with oxide–nitride–oxynitride stack structure for realization of multi-function mobile flat panel displays von Jung, Sungwook, Kim, Jaehong, Son, Hyukjoo, Jang, Kyungsoo, Cho, Jaehyun, Kim, Kyunghae, Choi, Byoungdeog, Yi, Junsin

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Optical and electrical properties of negatively charged aluminium oxynitride films von Jang, Kyungsoo, Jung, Sungwook, Lee, Jeoungin, Lee, Kwangsoo, Kim, Jaehong, Son, Hyukjoo, Yi, Junsin

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Fabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride ( Si O x N y ) as tunneling layer on... von Jung, Sungwook, Kim, Jaehong, Son, Hyukjoo, Hwang, Sunghyun, Jang, Kyungsoo, Lee, Jungin, Lee, Kwangsoo, Park, Hyungjun, Kim, Kyunghae, Yi, Junsin, Chung, Hokyoon, Choi, Byoungdeog, Lee, Kiyong

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Application of a Gate Blocking Layer on Glass by Using TiO2 as a High-k Material for a Nonvolatile Memory von Lee, Kwangsoo, Jung, Sungwook, Son, Hyukjoo, Jang, Kyungsoo, Lee, Jeoungin, Park, Hyungjun, Kim, Jaehong, Kim, Kyunghae, Yi, Junsin

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The Characteristics of Al/SiNX/a-Si /SiON/Si Structure using a-Si Thin Films as a Charge Trap Layer von Cho, Jaehyun, Son, Hyukjoo, Jung, Sungwook, Choi, Byoung D., Yi, Junsin

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