Creation and plasmon anisotropy spectroscopy of wedge-shaped gold nanoclusters conditioned by GaAs(001) surface von Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Alekseev, P.A., Borodin, B.R., Soldatenkov, F.Yu, Nashchekin, A.V., Khakhulin, S.A., Komkov, O.S.

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Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers von Sobolev, M. M., Soldatenkov, F. Yu

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Dissimilar gold nanoclusters at GaAs(0 0 1) surface: Formation chemistry, structure, and localized plasmons von Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Soldatenkov, F.Yu, Makarenko, I.V., Levitskii, V.S., Nashchekin, A.V., Alekseev, P.A.

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Study of deep levels in GaAs p–i–n structures von Sobolev, M. M., Soldatenkov, F. Yu, Kozlov, V. A.

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Gold nanoclusters on GaAs(001) surface: atomic force microscopy and optical spectroscopy of plasmons von Berkovits, V.L., Alekseev, P.A., Kosobukin, V.A., Ulin, V.P., Soldatenkov, F.Yu, Zgerskii, I.V.

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Porous silicon and its applications in biology and medicine von Ksenofontova, O. I., Vasin, A. V., Egorov, V. V., Bobyl’, A. V., Soldatenkov, F. Yu, Terukov, E. I., Ulin, V. P., Ulin, N. V., Kiselev, O. I.

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Surface of porous silicon under hydrophilization and hydrolytic degradation von Ulin, V. P., Ulin, N. V., Soldatenkov, F. Yu, Semenov, A. V., Bobyl, A. V.

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Temperature stability of contact systems for GaSb-based photovoltaic converters von Khvostikov, V. P., Sorokina, S. V., Potapovich, N. S., Soldatenkov, F. Yu, Timoshina, N. Kh

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Estimation of quality of GaAs substrates used for constructing semiconductor power devices von Shul’pina, I. L., Ratnikov, V. V., Kozlov, V. A., Soldatenkov, F. Yu, Voitovich, V. E.

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