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Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W∕WNx∕poly-Si gate MOSFET for high density DRAM applications
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
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Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor depositi...
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
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