Nanopore morphology in porous GaN template and its effect on the LEDs emission von Soh, C B, Tay, C B, Tan, Rayson J N, Vajpeyi, A P, Seetoh, I P, Ansah-Antwi, K K, Chua, S J

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Identification of deep levels in GaN associated with dislocations von Soh, C B, Chua, S J, Lim, H F, Chi, D Z, Liu, W, Tripathy, S

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Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs von Soh, C.B., Tay, C.B., Chua, S.J., Le, H.Q., Ang, N.S.S., Teng, J.H.

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Assignment of deep levels causing yellow luminescence in GaN von Soh, C. B., Chua, S. J., Lim, H. F., Chi, D. Z., Tripathy, S., Liu, W.

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Emission characteristics of ZnO nanorods on nanosilicon-on-insulator: competition between exciton–phonon coupling and surface resonance effect von Mohanta, S K, Tripathy, S, Soh, C B, Kim, D C, Kong, B H, Cho, H K

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Development of (Zr,Mn) doped X-type hexaferrites for high frequency EMI shielding applications von Ye, Htet Kyaw, Shannigrahi, S.R., Soh, C.B., Yang, S.L.W., Li, L.S., Repka, D.V.M., Kumar, P.

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Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN von Wang, X.C., Lim, G.C., Liu, W., Soh, C.B., Chua, S.J.

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Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates von Soh, C B, Chow, S Y, Tripathy, S, Chua, S J

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Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition von Liu, W., Soh, C.B., Chen, P., Chua, S.J.

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On regularizing singular systems by decentralized output feedback von Wang, D., Soh, C.B.

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Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence von Seetoh, I. P., Soh, C. B., Fitzgerald, E. A., Chua, S. J.

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Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth von Hartono, H., Soh, C. B., Chua, S. J., Fitzgerald, E. A.

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The influence of V defects on luminescence properties of AlInGaN quaternary alloys von Soh, C B, Chua, S J, Tripathy, S, Liu, W, Chi, D Z

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Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN von Soh, C. B, Liu, W, Yong, A. M, Chua, S. J, Chow, S. Y, Tripathy, S, Tan, R. J. N

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Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template von Hartono, H., Soh, C. B., Chow, S. Y., Chua, S. J., Fitzgerald, E. A.

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Influence of composition pulling effect on the two-dimensional electron gas formed at AlyInxGa1−x−yN∕GaN interface von Soh, C. B., Chua, S. J., Tripathy, S., Chow, S. Y., Chi, D. Z., Liu, W.

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Absorptive protective padding with electrospinned polyester fibers with hydrogel matrix von Soh, C. B., Lee, X. H., Lim, Samuel W. Y., Sipalah, N. F. B., Ho, Paul

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Quantum dots excited InGaN/GaN phosphor-free white LEDs von Chua, S. J., Soh, C. B., Liu, W., Teng, J. H., Ang, S. S., Teo, S. L.

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Inverted hexagonal pits formation in AlInGaN epilayer von Soh, C.B, Liu, W, Chua, S.J, Tripathy, S, Chi, D.Z

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Pulse Design for Time Reversal Method as Applied to Ultrawideband Microwave Breast Cancer Detection: A Two-Dimensional Analysis von Yifan Chen, Gunawan, E., Kay Soon Low, Shih-chang Wang, Yongmin Kim, Cheong Boon Soh

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