Limitations of Methods for Evaluating the Hardness of Microelectronic Devices to Single Event Effects on Ion Accelerators von Chumakov, A. I., Sogoyan, A. V., Yanenko, A. V.

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Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles von Sogoyan, A. V., Chumakov, A. I.

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Conversion model of radiation-induced interface-trap buildup and the some examples of its application von Pershenkov, V S, Sogoyan, A V, Telets, V A

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Simulation of impact of the HCP on the CNT-nanosensor by the molecular dynamics method von Sogoyan, A. V., Boychenko, D. V., Demidova, A. V.

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Method of radiational identification of a plant and characterization of integrated circuit technology von Sogoyan, A. V., Davydov, G. G., Artamonov, A. S., Kolosova, A. S., Telets, V. A., Nikiforrov, A. Yu, Ozhegin, Yu. A., Kameneva, A. S., Moskovskaya, Yu. M.

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The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices von Pershenkov, V.S., Maslov, V.B., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Belyakov, V.V., Sogoyan, A.V., Rusanovsky, V.I., Ulimov, V.N., Emelianov, V.V., Nasibullin, V.S.

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Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment von Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

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Effect of aging on radiation response of bipolar transistors von Pershenkov, V.S., Slesarev, A.Y., Sogoyan, A.V., Belyakov, V.V., Kekukh, V.B., Bashin, A.Y., Ivashin, D.V., Motchkine, V.S., Ulimov, V.N., Emelianov, V.V.

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IC’s radiation effects modeling and estimation von Belyakov, V.V, Chumakov, A.I, Nikiforov, A.Y, Pershenkov, V.S, Skorobogatov, P.K, Sogoyan, A.V

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Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices von Emelianov, V.V., Sogoyan, A.V., Meshurov, O.V., Ulimov, V.N., Pershenkov, V.S.

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Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures von Pershenkov, V.S., Cherepko, S.V., Sogoyan, A.V., Belyakov, V.V., Ulimov, V.N., Abramov, V.V., Shalnov, A.V., Rusanovsky, V.I.

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A model for the formation of leakage currents in the dielectrics of MOS structures under the effect of heavy charged particles von Sogoyan, A. V., Polunin, V. A.

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Evaluation of resistance of CMOS LSIC to the factor of absorbed dose under the pulsed radiation effect von Sogoyan, A. V.

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The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation von Sogoyan, A. V., Cherepko, S. V., Pershenkov, V. S.

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Effect of electron traps on reversibility of annealing von Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Nikiforov, A.Y., Sogoyan, A.V., Ulimov, V.N., Emelianov, V.V.

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Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation von Sogoyan, A. V., Davydov, G. G.

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The impact of laser polarization direction on local dose rate effects simulation for modern integrated circuits von Skorobogatov, P. K., Sogoyan, A. V., Davydov, G. G., Egorov, A. N., Savchenkov, D. V.

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Modeling of recombination in SiO2 under the effect of ionizing radiation by the Monte Carlo method von Polunin, V. A., Sogoyan, A. V.

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IC space radiation effects experimental simulation and estimation methods von Chumakov, A.I., Nikiforov, A.T., Telets, V.A., Gerasimov, V.F., Yanenko, A.V., Sogoyan, A.V.

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The investigation of the radiation behavior of cells of energy-independent electrically reprogrammable memory based on self-formed conducting nanostructures. I. Mode of information... von Mordvintsev, V. M., Sogoyan, A. V., Kudryavtsev, S. E., Levin, V. L.

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