Enhanced fluorescence emission from quantum dots on a photonic crystal surface von Cunningham, Brian T, Ganesh, Nikhil, Zhang, Wei, Mathias, Patrick C, Chow, Edmond, Soares, J. A. N. T, Malyarchuk, Viktor, Smith, Adam D

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Enhanced fluorescence emission from quantum dots on a photonic crystal surface von Ganesh, Nikhil, Zhang, Wei, Mathias, Patrick C., Chow, Edmond, Soares, J. A. N. T., Malyarchuk, Viktor, Smith, Adam D., Cunningham, Brian T.

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Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics von Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., Greene, J. E.

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Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy von Park, S. Y., D’Arcy-Gall, J., Gall, D., Soares, J. A. N. T, Kim, Y.-W., Kim, H., Desjardins, P., Greene, J. E., Bishop, S. G.

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Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy von Soares, J A N T, Enderlein, R, Beliaev, D, Leite, J R, Saito, M

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Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy von Bratland, K. A., Foo, Y. L., Soares, J. A. N. T., Spila, T., Desjardins, P., Greene, J. E.

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ESTADO DE ENGORDURAMENTO DA CARCAÇA DE OVINOS SANTA INÊS E MORADA NOVA ABATIDOS COM DIFERENTES PESOS von Medeiros G. R, Costa R. G, Andrade M. G. L. P., Azevedo P. S, Medeiros A. N, Pinto T. F, Soares J. N., Suassuna J. M. A.

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CARACTERÍSTICAS DE CARCAÇA DE OVINOS SANTA INÊS E MORADA NOVA ABATIDOS COM DIFERENTES PESOS von Costa R. G, Andrade M. G. L.P, Medeiros G. R, Azevedo P. S, Medeiros, A. N, Pinto T. F, Soares J. N., Suassuna J. M. A.

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Photoluminescence of CdSe quantum dots and rods from buffer-layer-assisted growth von Antonov, V. N., Swaminathan, P., Soares, J. A. N. T., Palmer, J. S., Weaver, J. H.

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C incorporation and segregation during Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3 von FOO, Y. L, BRATLAND, K. A, CHO, B, SOARES, J. A. N. T, DESJARDINS, P, GREENE, J. E

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Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN von Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Brasil, M. J. S. P., Soares, J. A. N. T., Santos, A. M., Noriega, O. C., Leite, J. R., As, D. J., Köhler, U., Potthast, S., Pacheco-Salazar, D. G.

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Near band-edge optical properties of cubic GaN von Fernandez, J.R.L., Noriega, O.C., Soares, J.A.N.T., Cerdeira, F., Meneses, E.A., Leite, J.R., As, D.J., Schikora, D., Lischka, K.

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Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation von Kim, H., Glass, G., Soares, J. A. N. T., Foo, Y. L., Desjardins, P., Greene, J. E.

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Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties von Soares, J. A. N. T., Kim, H., Glass, G., Desjardins, P., Greene, J. E.

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Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si{sub 2}H{sub 6} and AsH{sub 3}: Effects on film-growth kinetics von Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., Greene, J. E.

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Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells von Choque, N.M.S., Beliaev, D., Soares, J.A.N.T., Scolfaro, L.M.R., Sperandio, A.L., Quivy, A.A., Leite, J.R.

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Cd-based II-VI semiconductor nanostructures produced by buffer-layer-assisted growth: Structural evolution and photoluminescence von Swaminathan, P., Antonov, V. N., Soares, J. A. N. T., Palmer, J. S., Weaver, J. H.

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Photoreflectance investigations of semiconductor device structures von Soares, J.A.N.T., Beliaev, D., Enderlein, R., Scolfaro, L.M.R., Saito, M., Leite, J.R.

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Effect of Gamma Irradiation on Ultimate Tensile Strength of Enamel and Dentin von Soares, C.J., Castro, C.G., Neiva, N.A., Soares, P.V., Santos-Filho, P.C.F., Naves, L.Z., Pereira, P.N.R.

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Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells von Soler, M.A.G., Depeyrot, J., Morais, P.C., Soares, J.A.N.T., Scolfaro, L.M.R., da Silva, E.C.F., Enderlein, R., Weimann, G., Trankle, G.

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