Simulation of gain in quantum cascade lasers von Wacker, Andreas, Nelander, Rikard, Weber, Carsten

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Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers von Matthews, D. R., Summers, H. D., Smowton, P. M., Hopkinson, M.

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Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm von Pope, I. A., Smowton, P. M., Blood, P., Thomson, J. D., Kappers, M. J., Humphreys, C. J.

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Determination of the piezoelectric field in InGaN quantum wells von Brown, I. H., Pope, I. A., Smowton, P. M., Blood, P., Thomson, J. D., Chow, W. W., Bour, D. P., Kneissl, M.

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The differential efficiency of quantum-well lasers von Smowton, P.M., Blood, P.

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Optical absorption cross section of quantum dots von Osborne, S W, Blood, P, Smowton, P M, Xin, Y C, Stintz, A, Huffaker, D, Lester, L F

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Determination of single-pass optical gain and internal loss using a multisection device von Thomson, J. D., Summers, H. D., Hulyer, P. J., Smowton, P. M., Blood, P.

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InP-GaInP quantum-dot lasers emitting between 690-750 nm von Smowton, P.M., Lutti, J., Lewis, G.M., Krysa, A.B., Roberts, J.S., Houston, P.A.

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Recombination mechanisms in 1.3-μm InAs quantum-dot lasers von Sandall, I.C., Smowton, P.M., Walker, C.L., Liu, H.Y., Hopkinson, M., Mowbray, D.J.

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Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers von Palmer, D. J., Smowton, P. M., Blood, P., Yeh, Jeng-Ya, Mawst, L. J., Tansu, Nelson

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Optical mode loss and gain of multiple-layer quantum-dot lasers von Smowton, P. M., Herrmann, E., Ning, Y., Summers, H. D., Blood, P., Hopkinson, M.

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Dynamics of the wetting-Layer-quantum-dot interaction in InGaAs self-assembled systems von Matthews, D.R., Summers, H.D., Smowton, P.M., Blood, P., Rees, P., Hopkinson, M.

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Optical properties of InP∕GaInP quantum-dot laser structures von Lewis, G. M., Lutti, J., Smowton, P. M., Blood, P., Krysa, A. B., Liew, S. L.

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Comparison of experimental and theoretical GaInP quantum well gain spectra von Chow, W. W., Smowton, P. M., Blood, P., Girndt, A., Jahnke, F., Koch, S. W.

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Low-loss III-V photonics and high efficiency grating couplers incorporating low-index AlOx layers von Albeladi, FT, Gillgrass, S, Nabialek, J, Hodges, C, Tang, M, Deng, H, Liu, HY, Shutts, S, Smowton, PM

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Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement von Groom, K. M., Tartakovskii, A. I., Mowbray, D. J., Skolnick, M. S., Smowton, P. M., Hopkinson, M., Hill, G.

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Modeling the effects of p-modulation doping in InAs quantum dot devices von Maglio, B, Jarvis, L, Tang, M, Liu, H, Smowton, PM

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Laser dynamics in self-pulsating quantum dot systems von Summers, Huw D., Matthews, Daniel R., Smowton, Peter M., Rees, Paul, Hopkinson, Mark

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The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes von Thomson, J. D., Pope, I. A., Smowton, P. M., Blood, P., Lynch, R. J., Hill, G., Wang, T., Parbrook, P.

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Multi-mode Interference Reflector based InAs-QD Laser von Albeladi, FT, Gillgrass, S, Nabialek, J, Mishra, P, Forrest, R, Albiladi, TR, Shutts, S, Tang, M, Liu, HY, Smowton, PM

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