Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means von Bartmann, M G, Sistani, M, Glassner, S, Salem, B, Baron, T, Gentile, P, Smoliner, J, Lugstein, A

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Bias-tunable temperature coefficient of resistance in Ge transistors von Behrle, R., Smoliner, J., Wind, L., Nazzari, D., Lugstein, A., Weber, W. M., Sistani, M.

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Calibrated nanoscale capacitance measurements using a scanning microwave microscope von Huber, H. P., Moertelmaier, M., Wallis, T. M., Chiang, C. J., Hochleitner, M., Imtiaz, A., Oh, Y. J., Schilcher, K., Dieudonne, M., Smoliner, J., Hinterdorfer, P., Rosner, S. J., Tanbakuchi, H., Kabos, P., Kienberger, F.

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Electrical characterization and examination of temperature-induced degradation of metastable Ge0.81Sn0.19 nanowires von Sistani, M, Seifner, M S, Bartmann, M G, Smoliner, J, Lugstein, A, Barth, S

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Germanium nanowire microbolometer von Bartmann, M G, Sistani, M, Luhmann, N, Schmid, S, Bertagnolli, E, Lugstein, A, Smoliner, J

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Calibrated nanoscale dopant profiling using a scanning microwave microscope von Huber, H. P., Humer, I., Hochleitner, M., Fenner, M., Moertelmaier, M., Rankl, C., Imtiaz, A., Wallis, T. M., Tanbakuchi, H., Hinterdorfer, P., Kabos, P., Smoliner, J., Kopanski, J. J., Kienberger, F.

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Electrical characterization and examination of temperature-induced degradation of metastable Ge 0.81 Sn 0.19 nanowires von Sistani, M, Seifner, M S, Bartmann, M G, Smoliner, J, Lugstein, A, Barth, S

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Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing von Bethge, O., Zimmermann, C., Lutzer, B., Simsek, S., Smoliner, J., Stöger-Pollach, M., Henkel, C., Bertagnolli, E.

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Integrating an Ultramicroelectrode in an AFM Cantilever:  Combined Technology for Enhanced Information von Kranz, Christine, Friedbacher, Gernot, Mizaikoff, Boris, Lugstein, Alois, Smoliner, Jürgen, Bertagnolli, Emmerich

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Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz von Kasper, M., Gramse, G., Hoffmann, J., Gaquiere, C., Feger, R., Stelzer, A., Smoliner, J., Kienberger, F.

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Frequency-selective contrast on variably doped p-type silicon with a scanning microwave microscope von Imtiaz, A., Wallis, T. M., Lim, S.-H., Tanbakuchi, H., Huber, H.-P., Hornung, A., Hinterdorfer, P., Smoliner, J., Kienberger, F., Kabos, P.

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Rashba effect in type-II resonant tunneling diodes enhanced by in-plane magnetic fields von Silvano de Sousa, J., Smoliner, J.

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Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric von Bethge, O., Henkel, C., Abermann, S., Pozzovivo, G., Stoeger-Pollach, M., Werner, W.S.M., Smoliner, J., Bertagnolli, E.

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An intercepted feedback mode for light sensitive spectroscopic measurements in atomic force microscopy von Smoliner, J, Brezna, W

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A quantitative analysis of photocurrent signals measured on GaAs using conductive atomic force microscopy von Eckhardt, C., Madl, M., Brezna, W., Smoliner, J.

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FIB processing of silicon in the nanoscale regime von Lugstein, A., Basnar, B., Smoliner, J., Bertagnolli, E.

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Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors von Bethge, O., Abermann, S., Henkel, C., Straif, C. J., Hutter, H., Smoliner, J., Bertagnolli, E.

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Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si von Uhrmann, T, Dimopoulos, T, Kovacs, A, Kohn, A, Weyers, S, Paschen, U, Smoliner, J, Brückl, H

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Variable wavelength photocurrent mapping on PbS quantum dot: fullerene thin films by conductive atomic force microscopy von Madl, M, Brezna, W, Basnar, B, Yarema, M, Heiss, W, Smoliner, J

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High resolution photocurrent imaging by atomic force microscopy on the example of single buried InAs quantum dots von Madl, M, Brezna, W, Klang, P, Andrews, A M, Strasser, G, Smoliner, J

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