Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Yang, Jiancheng, Ren, F., Yang, Gwangseok, Kim, Jihyun, Kuramata, A., Pearton, S. J.

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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments von Lee, In-Hwan, Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Lagov, P. B., Zinov'ev, R. A., Yakimov, E. B., Shcherbachev, K. D., Pearton, S. J.

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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes von Polyakov, A. Y., Haller, C., Smirnov, N. B., Shiko, A. S., Shchemerov, I. V., Chernykh, S. V., Alexanyan, L. A., Lagov, P. B., Pavlov, Yu. S., Carlin, J.-F., Mosca, M., Butté, R., Grandjean, N., Pearton, S. J.

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Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical... von Jang, Lee-Woon, Jeon, Dae-Woo, Polyakov, A.Y., Govorkov, A.V., Sokolov, V.N., Smirnov, N.B., Cho, Han-Su, Yun, Jin-Hyeon, Shcherbatchev, K.D., Baek, Jong-Hyeob, Lee, In-Hwan

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Electrical properties of bulk semi-insulating β-Ga2O3 (Fe) von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Pearton, S. J., Ren, Fan, Chernykh, A. V., Kochkova, A. I.

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Electron irradiation of near‐UV GaN/InGaN light emitting diodes von Lee, In‐Hwan, Polyakov, Alexander Y., Smirnov, N. B., Shchemerov, I. V., Shmidt, N. M., Tal'nishnih, N. A., Shabunina, E. I., Cho, Han‐Su, Hwang, Sung‐Min, Zinovyev, R. A., Didenko, S. I., Lagov, P. B., Pearton, S. J.

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Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching von Polyakov, A. Y., Jeon, Dae-Woo, Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Yakimov, E. B., Lee, In-Hwan

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Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Pearton, S. J., Fares, Chaker, Yang, Jiancheng, Ren, Fan, Kim, Jihyun, Lagov, P. B., Stolbunov, V. S., Kochkova, A.

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Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth von Polyakov, A. Y., Jeon, Dae-Woo, Lee, In-Hwan, Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Yakimov, E. B.

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Experimental estimation of electron–hole pair creation energy in β-Ga2O3 von Yakimov, E. B., Polyakov, A. Y., Shchemerov, I. V., Smirnov, N. B., Vasilev, A. A., Vergeles, P. S., Yakimov, E. E., Chernykh, A. V., Ren, F., Pearton, S. J.

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Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra von Polyakov, A. Y., Lee, In-Hwan, Smirnov, N. B., Yakimov, E. B., Shchemerov, I. V., Chernykh, A. V., Kochkova, A. I., Vasilev, A. A., Ren, F., Carey, P. H., Pearton, S. J.

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Electrical characteristics of Au and Ag Schottky contacts on n-ZnO von Polyakov, A. Y., Smirnov, N. B., Kozhukhova, E. A., Vdovin, V. I., Ip, K., Heo, Y. W., Norton, D. P., Pearton, S. J.

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors von Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Smirnov, N.B., Vasilev, A.A., Kochkova, A.I., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Xian, Minghan, Ren, F., Pearton, S.J.

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Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3 von Polyakov, A. Y., Lee, In-Hwan, Miakonkikh, Andrew, Chernykh, A. V., Smirnov, N. B., Shchemerov, I. V., Kochkova, A. I., Vasilev, A. A., Pearton, S. J.

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Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Saranin, D. S., Le, T. S., Didenko, S. I., Kuznetsov, D. V., Agresti, A., Pescetelli, S., Matteocci, F., Di Carlo, A.

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Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 von Polyakov, A Y, Smirnov, N B, Shchemerov, I V, Vasilev, A A, Yakimov, E B, Chernykh, A V, Kochkova, A I, Lagov, P B, Pavlov, Yu S, Kukharchuk, O F, Suvorov, A A, Garanin, N S, Lee, In-Hwan, Xian, Minghan, Ren, Fan, Pearton, S J

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Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Pearton, S. J., Ren, F., Chernykh, A. V., Lagov, P. B., Kulevoy, T. V.

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Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers von Yakimov, E B, Polyakov, A Y, Smirnov, N B, Shchemerov, I V, Vergeles, P S, Yakimov, E E, Chernykh, A V, Xian, Minghan, Ren, F, Pearton, S J

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Electric field dependence of major electron trap emission in bulk β-Ga2O3: Poole-Frenkel effect versus phonon-assisted tunneling von Polyakov, A Y, Lee, In-Hwan, Smirnov, N B, Shchemerov, I V, Vasilev, A A, Chernykh, A V, Pearton, S J

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1 GeV proton damage in β-Ga2O3 von Polyakov, A. Y., Shchemerov, I. V., Vasilev, A. A., Kochkova, A. I., Smirnov, N. B., Chernykh, A. V., Yakimov, E. B., Lagov, P. B., Pavlov, Yu. S., Ivanov, E. M., Gorbatkova, O. G., Drenin, A. S., Letovaltseva, M. E., Xian, Minghan, Ren, Fan, Kim, Jihyun, Pearton, S. J.

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