Light emitters based on CdTe doped with isovalent impurities von Mazur, T.M., Slyotov, M.M., Slyotov, O.M., Mazur, M.P.

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GaN based light emitters von Slyotov, M.M., Slyotov, O.M., Potsіluiko-Hryhoriak, H.V., Mazur, M.P., Mazur, Т.М.

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Features of the management of the rule of Urbakh in ZnSe:Yb crystals von Kinzerska, O.V., Senko, I.M., Slyotov, M.M., Slyotov, O.M., Mazur, T.M.

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Light sources based on CdTe/CdS/ZnS heterostructures von Slyotov, M.M., Slyotov, O.M., Кinzerska, O.V., Мazur, T.M., Horichok, I.V., Mazur, M.P.

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The barrier capacitance of n-SnS2/n-CdIn2Te4 heterojunction von Grushka, O.G., Chupyra, S. M., Myslyuk, O.M., Slyotov, O.M.

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Оптичні властивості CdTe, легованого Ca von Prokopiv, V.V., Mazur, T.M., Slyotov, M.M., Mazur, M.P., Kinzerska, O.V., Slyotov, O.M.

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Annealing effect on the near-band edge emission of ZnO von Khomyak, V.V., Slyotov, M.M., Shtepliuk, I.I., Lashkarev, G.V., Slyotov, O.M., Marianchuk, P.D., Kosolovskiy, V.V.

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