A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown von Nenadovic, N., d'Alessandro, V., Nanver, L.K., Tamigi, F., Rinaldi, N., Slotboom, J.W.

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Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors von Nenadovic, N., Mijalkovic, S., Nanver, L.K., Vandamme, L.K.J., d'Alessandro, V., Schellevis, H., Slotboom, J.W.

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A back-wafer contacted silicon-on-glass integrated bipolar process. Part I. The conflict electrical versus thermal isolation von Nanver, L.K., Nenadovic, N., d'Alessandro, V., Schellevis, H., van Zeijl, H.W., Dekker, R., de Mooij, D.B., Zieren, V., Slotboom, J.W.

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Electrothermal limitations on the current density of high-frequency bipolar transistors von Nenadovic, N., Nanver, L.K., Slotboom, J.W.

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Impact ionization in thin silicon diodes von Agarwal, P., Goossens, M.J., Zieren, V., Aksen, E., Slotboom, J.W.

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Unified apparent bandgap narrowing in n- and p-type silicon von Klaassen, D.B.M., Slotboom, J.W., de Graaff, H.C.

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RF power silicon-on-glass VDMOSFETs von Nenadovic, N., Cuoco, V., Theeuwen, S.J.C.H., Schellevis, H., Spierings, G., Griffo, A., Pelk, M., Nanver, L.K., Jos, R.F.F., Slotboom, J.W.

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A new trench bipolar transistor for RF applications von Hueting, R.J.E., Slotboom, J.W., Melai, J., Agarwal, P., Magnee, P.H.C.

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Reduction of UHF power transistor distortion with a nonuniform collector doping profile von van Noort, W.D., de Vreede, L.C.N., Jos, H.F.F., Nanver, L.K., Slotboom, J.W.

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Photo carrier generation in bipolar transistors von Klootwijk, J.H., Slotboom, J.W., Peter, M.S., Zieren, V., de Mooy, D.B.

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Arsenic-spike epilayer technology applied to bipolar transistors von Van Noort, W.D., Nanver, L.K., Slotboom, J.W.

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A better insight into the performance of silicon BJTs featuring highly nonuniform collector doping profiles von Palestri, P., Fiegna, C., Selmi, L., Peter, M.S., Hurkx, G.A.M., Slotboom, J.W., Sangiorgi, E.

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Measurements of bandgap narrowing in Si bipolar transistors von Slotboom, J.W., de Graaff, H.C.

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Computer-aided two-dimensional analysis of bipolar transistors von Slotboom, J.W.

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Thermally induced current bifurcation in bipolar transistors von La Spina, L., Nenadović, N., d’Alessandro, V., Tamigi, F., Rinaldi, N., Nanver, L.K., Slotboom, J.W.

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Impact of silicon substrates on leakage currents von Slotboom, J.W., Theunissen, M.J.J., de Bock, A.J.R.

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Electrothermal characterization of silicon-on-glass VDMOSFETs von Nenadović, N., Cuoco, V., Theeuwen, S.J.C.H., Nanver, L.K., Schellevis, H., Spierings, G., Jos, H.F.F., Slotboom, J.W.

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Parasitic energy barriers in SiGe HBTs von Slotboom, J.W., Streutker, G., Pruijmboom, A., Gravesteijn, D.J.

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On the optimization of SiGe-base bipolar transistors von Hueting, R.J.E., Slotboom, J.W., Pruijmboom, A., de Boer, W.B., Timmering, C.E., Cowern, N.E.B.

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Bipolar transistor epilayer design using the MAIDS mixed-level simulator von de Vreede, L.C.N., de Graaff, H.C., Willemen, J.A., van Noort, W., Jos, R., Larson, L.E., Slotboom, J.W., Tauritz, J.L.

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