ECF-Type ATP-Binding Cassette Transporters von Rempel, S, Stanek, W.K, Slotboom, D.J

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Escherichia coli Peptide Binding Protein OppA Has a Preference for Positively Charged Peptides von Klepsch, M.M., Kovermann, M., Löw, C., Balbach, J., Permentier, H.P., Fusetti, F., de Gier, J.W., Slotboom, D.J., Berntsson, R.P. -A.

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Structural and functional analysis of aa3‐type and cbb3‐type cytochrome c oxidases of Paracoccus denitrificans reveals significant differences in proton‐pump design von Gier, Jan‐Willem L., Schepper, Mike, Reijnders, Willem N. M., Dyck, Stef J., Slotboom, Dirk Jan, Warne, Antony, Saraste, Matti, Krab, Klaas, Finel, Moshe, Stouthamer, Adriaan H., Spanning, Rob J. M., Oost, John

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Mutation in glutamate transporter homologue GltTk provides insights into pathologic mechanism of episodic ataxia 6 von Colucci, E., Anshari, Zaid R., M.F. Patino-Ruiz, Nemchinova, M., J. Whittaker, Slotboom, D.J., Guskov, A.

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Mutational analysis of mau genes involved in methylamine metabolism in Paracoccus denitrificans von Palen, C.J.N.M. van der, Slotboom, D.J, Jongejan, L, Reijnders, W.N.M, Harms, N, Duine, J.A, Spanning, R.J.M. van

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Parasitic energy barriers in SiGe HBTs von Slotboom, J.W., Streutker, G., Pruijmboom, A., Gravesteijn, D.J.

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Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy von Pruijmboom, A., Slotboom, J.W., Gravesteijn, D.J., Fredriksz, C.W., van Gorkum, A.A., van de Heuvel, R.A., van Rooij-Mulder, J.M.L., Streutker, G., van de Walle, G.F.A.

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Molecular beam epitaxy grown Si/Si0.87Ge0.13 heterojunction bipolar transistors with ideal I-V characteristics von GRAVESTEIJN, D. J, PRUIJMBOOM, A, KERSTEN, W. J, VAN ROOIJ-MULDER, J. M. L, READER, A. H, SLOTBOOM, J

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Molecular beam epitaxy grown Si/Si 0.87Ge 0.13 heterojunction bipolar transistors with ideal I–V characteristics von Gravesteijn, D.J., Pruijmboom, A., Kersten, W.J., van Rooij-Mulder, J.M.L., Reader, A.H., Slotboom, J.

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Heterojunction bipolar transistors with Si1−xGex base von Pruijmboom, A., Timmering, C.E., van Rooij-Mulder, J.M.L., Gravesteijn, D.J., de Boer, W.B., Kersten, W.J., Slotboom, J.W., Vriezema, C.J., de Kruif, R.

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Heterojunction bipolar transistors with Si 1− xGe x base von Pruijmboom, A., Timmering, C.E., van Rooij-Mulder, J.M.L., Gravesteijn, D.J., de Boer, W.B., Kersten, W.J., Slotboom, J.W., Vriezema, C.J., de Kruif, R.

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Non-local impact ionization in silicon devices von Slotboom, J.W., Streutker, G., van Dort, M.J., Woerlee, P.H., Pruijmboom, A., Gravesteijn, D.J.

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Heterojunction bipolar transistors with Si1-x Gex base von Pruijmboom, A., Timmering, C.E., van Rooij-Mulder, J.M.L., Gravesteijn, D.J., de Boer, W.B., Kersten, W.J., Slotboom, J.W., Vriezema, C.J., de Kruif, R.

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