Analysis of the dependence of critical electric field on semiconductor bandgap von Slobodyan, Oleksiy, Flicker, Jack, Dickerson, Jeramy, Shoemaker, Jonah, Binder, Andrew, Smith, Trevor, Goodnick, Stephen, Kaplar, Robert, Hollis, Mark

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Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy von DasGupta, S., Slobodyan, O., Smith, T., Binder, A., Flicker, J., Kaplar, R., Mueller, J., Garcia Rodriguez, L., Atcitty, S.

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Using lateral bulk heterojunctions to study the effects of additives on PTB7:PC 61 BM space charge regions von Gutierrez, Marlene, Slobodyan, Oleksiy, Dodabalapur, Ananth, Vanden Bout, David A.

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Using lateral bulk heterojunctions to study the effects of additives on PTB7:PC61BM space charge regions von Gutierrez, Marlene, Slobodyan, Oleksiy, Dodabalapur, Ananth, Vanden Bout, David A.

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Hard-Switching Reliability Studies of 1200 V Vertical GaN PiN Diodes von Slobodyan, Oleksiy, Smith, Trevor, Flicker, Jack David, Sandoval, Stephanie, Matthews, Chris, Van Heukelom, Michael, Kaplar, Robert, Atcitty, Stanley

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(Invited) A New Analysis of the Dependence of Critical Electric Field on Semiconductor Bandgap von Kaplar, Robert J., Slobodyan, Oleksiy, Flicker, Jack D., Hollis, Mark A.

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