Photodetector for hydrogen and water vapour von Slobodchikov, S.V., Pentsov, A.V., Kovalevskaya, G.G., Meredov, M.M.

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Influence of hydrogen sulfide on electrical and photoelectric properties of Al-p-Si-SnO2:Cu-Ag heterostructures von Slobodchikov, S. V., Russu, E. V., Ivanov, É. V., Malinin, Yu. G., Salikhov, Kh. M.

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On the charge-transport mechanisms in Cr-n-InP and Mo-n-InP diode structures von Slobodchikov, S. V., Salikhov, Kh. M., Samorukov, B. E.

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Charge transport in Fe-p-InP diode structures von Slobodchikov, S. V., Salikhov, Kh. M., Samorukov, B. E.

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Long-term variation of electrical and photoelectric characteristics of Pd-p-InP diode structures von Slobodchikov, S. V., Salikhov, Kh. M., Russu, E. V.

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Effect of hydrogen sulfide on photoelectric characteristics of Al-n-Si-SnO2:Cu-Ag isotype heterostructures von Slobodchikov, S. V., Russu, E. V., Ivanov, É. V., Malinin, Yu. G., Salikhov, Kh. M.

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Influence of humidity and hydrogen on the charge transport in p-InP diode structures with a palladium contact von Slobodchikov, S. V., Salikhov, Kh. M.

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Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them von Slobodchikov, S. V.

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Suppression of current by light in p-Si-n +-ZnO-n-ZnO-Pd diode structures von Slobodchikov, S. V., Salikhov, Kh. M., Russu, E. V., Malinin, Yu. G.

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n(p)-InP-n-In2O3-P2O5-Pd diode structures as potential sensors for near-infrared radiation, moisture, and hydrogen von Slobodchikov, S. V., Salikhov, Kh. M.

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Charge transport mechanism and photoelectric characteristics of n +-Si-n-Si-Al2O3-Pd diode structures von Slobodchikov, S. V., Salikhov, Kh. M., Russu, E. V.

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Electrical and photoelectric characteristics of an isotypic n-ZnO-n-Si structure von Slobodchikov, S. V., Salikhov, Kh. M., Russu, E. V.

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Current transport in porous p-Si and Pd-porous Si structures von Slobodchikov, S. V., Salikhov, Kh. M., Russu, E. V.

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Influence of deep traps on current transport in Pd-p(n)-CdTe structures von Slobodchikov, S. V., Salikhov, Kh. M., Russu, E. V.

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On the mechanism of charge transfer in n +-CdS-p-InP-p +-InP heterostructures von Slobodchikov, S. V., Salikhov, Kh. M., Russu, E. V., Malinin, Yu. G.

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Longitudinal photoeffect in In0.53Ga0.47As p-n junctions von Slobodchikov, S. V., Salikhov, Kh. M., Russu, E. V.

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Optical and electrical properties of the CdS/InP heterostructures solar cells von Slobodchikov, S.V., Rusu, E., Arabadji, P., Purica, M., Budianu, E.

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Coordinate sensitive photodetectors based on InGaAs/InP heterostructures von Budeanu, E., Grozescu, I., Purica, M., Rusu, E., Slobodchikov, S.V.

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Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP von Rusu, E.V., Slobodchikov, S.V., Salikhov, H.M., Turcu, M.

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Lifetimes of Current Carriers in InP von Kovalevskaya, G. G., Slobodchikov, S. V.

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