A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology von Rizzo, N. D., Deshpande, S., Chia, H.-J., Alam, S. M., Andre, T., Aggarwal, S., Slaughter, J. M., Houssameddine, D., Janesky, J., Whig, R., Mancoff, F. B., Schneider, M. L., DeHerrera, M., Sun, J. J., Nagel, K.

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Magnetoresistive Random Access Memory von Apalkov, Dmytro, Dieny, Bernard, Slaughter, J. M.

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A 4-Mb toggle MRAM based on a novel bit and switching method von Engel, B.N., Akerman, J., Butcher, B., Dave, R.W., DeHerrera, M., Durlam, M., Grynkewich, G., Janesky, J., Pietambaram, S.V., Rizzo, N.D., Slaughter, J.M., Smith, K., Sun, J.J., Tehrani, S.

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Progress and outlook for MRAM technology von Tehrani, S., Slaughter, J.M., Chen, E., Durlam, M., Shi, J., DeHerren, M.

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Recent developments in magnetic tunnel junction MRAM von Tehrani, S., Engel, B., Slaughter, J.M., Chen, E., DeHerrera, M., Durlam, M., Naji, P., Whig, R., Janesky, J., Calder, J.

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MgO-based tunnel junction material for high-speed toggle magnetic random access memory von Dave, Renu W., Steiner, G., Slaughter, J. M., Sun, J. J., Craigo, B., Pietambaram, S., Smith, K., Grynkewich, G., DeHerrera, M., Akerman, J., Tehrani, S.

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High density submicron magnetoresistive random access memory (invited) von Tehrani, S., Chen, E., Durlam, M., DeHerrera, M., Slaughter, J. M., Shi, J., Kerszykowski, G.

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Criteria for ferromagnetic–insulator–ferromagnetic tunneling von Åkerman, Johan J., Escudero, R., Leighton, C., Kim, S., Rabson, D.A., Dave, Renu Whig, Slaughter, J.M., Schuller, Ivan K.

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Origin of temperature dependence in tunneling magnetoresistance von Åkerman, J. J, Roshchin, I. V, Slaughter, J. M, Dave, R. W, Schuller, I. K

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Intrinsic Reliability of AlOx-Based Magnetic Tunnel Junctions von Akerman, J., DeHerrera, M., Slaughter, J.M., Dave, R., Sun, J.J., Martin, J.T., Tehrani, S.

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Magnetoresistive random access memory using magnetic tunnel junctions von Tehrani, S., Butcher, B., Smith, K., Grynkewich, G., Slaughter, J.M., Deherrera, M., Engel, B.N., Rizzo, N.D., Salter, J., Durlam, M., Dave, R.W., Janesky, J.

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International Trade and Labour-market Outcomes: Results, Questions, and Policy Options von Slaughter, Matthew

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Perpendicular giant magnetoresistances of Ag/Co multilayers von Pratt, Jr, WP, Lee, S, Slaughter, JM, Loloee, R, Schroeder, PA, Bass, J

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Survey of Ti-, B-, and Y-based soft x-ray-extreme ultraviolet multilayer mirrors for the 2- to 12-nm wavelength region von Montcalm, C, Kearney, P A, Slaughter, J M, Sullivan, B T, Chaker, M, Pépin, H, Falco, C M

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Tunneling criteria for magnetic-insulator-magnetic structures von Åkerman, Johan J., Slaughter, J. M., Dave, Renu Whig, Schuller, Ivan K.

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Magnetostatic interactions between sub-micrometer patterned magnetic elements von Janesky, J., Rizzo, N.D., Savtchenko, L., Engel, B., Slaughter, J.M., Tehrani, S.

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Comparison of oxidation methods for magnetic tunnel junction material von Chen, E. Y., Whig, R., Slaughter, J. M., Cronk, D., Goggin, J., Steiner, G., Tehrani, S.

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A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects von Durlam, M., Naji, P.J., Omair, A., DeHerrera, M., Calder, J., Slaughter, J.M., Engel, B.N., Rizzo, N.D., Grynkewich, G., Butcher, B., Tracy, C., Smith, K., Kyler, K.W., Ren, J.J., Molla, J.A., Feil, W.A., Williams, R.G., Tehrani, S.

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Structure and performance of Si/Mo multilayer mirrors for the extreme ultraviolet von Slaughter, J. M., Schulze, Dean W., Hills, C. R., Mirone, A., Stalio, R., Watts, R. N., Tarrio, C., Lucatorto, T. B., Krumrey, M., Mueller, P., Falco, Charles M.

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Materials for Magnetoresistive Random Access Memory von Slaughter, J.M.

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