Hybrid Differential Evolution and Greedy Algorithm (DEGR) for solving Multi-Skill Resource-Constrained Project Scheduling Problem von Myszkowski, Paweł B., Olech, Łukasz P., Laszczyk, Maciej, Skowroński, Marek E.

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Hybrid ant colony optimization in solving multi-skill resource-constrained project scheduling problem von Myszkowski, Paweł B., Skowroński, Marek E., Olech, Łukasz P., Oślizło, Krzysztof

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Hybrid Ant Colony Optimization in solving Multi-Skill Resource-Constrained Project Scheduling Problem von Myszkowski, Paweł B, Skowroński, Marek E, Olech, Łukasz P, Oślizło, Krzysztof

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Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers von Skowronski, Marek, Liu, Kendrick X., Stahlbush, Robert E., Zhang, X., Caldwell, Joshua D.

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A Double-Blind, Randomized, Multicenter Study of MP4OX for Treatment of Perioperative Hypotension in Patients Undergoing Primary Hip Arthroplasty Under Spinal Anesthesia von van der Linden, Philippe, Gazdzik, Tadeusz S., Jahoda, David, Heylen, René J., Skowronski, Jan C., Pellar, David, Kofranek, Ivo, Górecki, Andrzej Z., Fagrell, Bengt, Keipert, Peter E., Hardiman, Yun J., Levy, Howard

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Nondestructive dislocation delineation using topographically enhanced imaging of surface morphologies in 4H-SiC epitaxial layers von Picard, Yoosuf N., Liu, Kendrick X., Stahlbush, Robert E., Twigg, Mark E., Zhang, Xuan, Skowronski, Marek

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Minority carrier diffusion length measurements in 6H-SiC von Polyakov, Alexander Y., Li, Qiang, Huh, Sung Wook, Skowronski, Marek, Lopatiuk, Olena, Chernyak, Leonid, Sanchez, Edward

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4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer von Sundaresan, Siddarth G., Skowronski, Marek, Berechman, R., Zhang, Jie, Stahlbush, Robert E., Singh, Ranbir, Chung, Gil Yong, Carlson, E.P., Toth, T.J., Wan, Jian Wei, Loboda, Mark J.

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Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth von Eddy, Charles R., Skowronski, Marek, Zhang, X., VanMil, Brenda L., Liu, Kendrick X., Stahlbush, Robert E., Lew, Kok Keong, Gaskill, D. Kurt, Myers-Ward, Rachael L.

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Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers von Skowronski, Marek, Eddy, Charles R., Mahadik, Nadeemullah A., VanMil, Brenda L., Chung, S., Stahlbush, Robert E., Wheeler, Virginia D., Gaskill, D. Kurt, Myers-Ward, Rachael L., Picard, Yoosuf N.

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Nondestructive dislocation delineation using topographically enhanced imaging of surface morphologies in 4 H - Si C epitaxial layers von Picard, Yoosuf N., Liu, Kendrick X., Stahlbush, Robert E., Twigg, Mark E., Zhang, Xuan, Skowronski, Marek

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Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC von Skowronski, Marek, Chung, H.J., Glaser, E.R., Polyakov, A.Y., Zvanut, Mary Ellen, Ngetich, G., Garces, N.Y.

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Hexagonal voids and the formation of micropipes during SiC sublimation growth von Kuhr, Thomas A., Sanchez, Edward K., Skowronski, Marek, Vetter, William M., Dudley, Michael

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Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition von Skowronski, Marek, Polyakov, A.Y., Chung, Hun Jae, Zvanut, Mary Ellen

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Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes von Carlos, W.E., Skowronski, Marek, Chung, Hun Jae, Nigam, Saurav, Glaser, E.R., Polyakov, A.Y., Huh, Sung Wook, Garces, N.Y.

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Pneumococcal vaccination and myocardial infarction von Rosa, Eduardo M, Osório, Ana P S, Scopel, Luciano

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Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates von Carlos, W.E., Skowronski, Marek, Chung, Hun Jae, Nigam, Saurav, Glaser, E.R., Shanabrook, B.V., Polyakov, A.Y.

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Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide von Everson, W.J., Berkman, E., Skowronski, Marek, Grim, J.R., Redwing, Joan M., Goda, G., Snyder, David, Heydemann, V.D., Gamble, Rick D., Acord, J.D.

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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices von Skowronski, Marek, Paisley, Michael J., Carter Jr, Calvin H., Bergman, Peder, Hull, Brett A., Das, Mrinal K., Ha, Seo Young, Sumakeris, Joseph J., Hallin, Christer, Lendenmann, H., Janzén, Erik, Palmour, John W., O'Loughlin, Michael J.

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Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition von Carlos, W.E., Skowronski, Marek, Chung, Hun Jae, Nigam, Saurav, Fanton, Mark A., Glaser, E.R., Smirnov, N.B., Polyakov, A.Y., Huh, Sung Wook

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