Mathematical modelling of cell suspension in high cell density conditions von Boudrant, J., Menshutina, N.V., Skorohodov, A.V., Guseva, E.V., Fick, M.

Volltext

Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells von Baidakova, N. A., Verbus, V. A., Morozova, E. E., Novikov, A. V., Skorohodov, E. V., Shaleev, M. V., Yurasov, D. V., Hombe, A., Kurokawa, Y., Usami, N.

Volltext

Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements von Lobanov, D. N., Novikov, A. V., Andreev, B. A., Bushuykin, P. A., Yunin, P. A., Skorohodov, E. V., Krasilnikova, L. V.

Volltext

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method von Lobanov, D. N., Novikov, A. V., Yunin, P. A., Skorohodov, E. V., Shaleev, M. V., Drozdov, M. N., Khrykin, O. I., Buzanov, O. A., Alenkov, V. V., Folomin, P. I., Gritsenko, A. B.

Volltext