Graphene enhanced field emission from InP nanocrystals von Iemmo, L, Di Bartolomeo, A, Giubileo, F, Luongo, G, Passacantando, M, Niu, G, Hatami, F, Skibitzki, O, Schroeder, T

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Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis von Manganelli, C.L., Virgilio, M., Skibitzki, O., Salvalaglio, M., Spirito, D., Zaumseil, P., Yamamoto, Y., Montanari, M., Klesse, W.M., Capellini, G.

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Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001) von Tetzner, H., Seifert, W., Skibitzki, O., Yamamoto, Y., Lisker, M., Mirza, M. M., Fischer, I. A., Paul, D. J., De Seta, Monica, Capellini, G.

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Publisher's Note: “Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)” [Appl. Phys. Lett. 122, 243503 (2023)] von Tetzner, H., Seifert, W., Skibitzki, O., Yamamoto, Y., Lisker, M., Mirza, M. M., Fischer, I. A., Paul, D. J., Seta, Monica De, Capellini, G.

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Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001) von Tetzner, H., Fischer, I. A., Skibitzki, O., Mirza, M. M., Manganelli, C. L., Luongo, G., Spirito, D., Paul, D. J., De Seta, M., Capellini, G.

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Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001) von Schlykow, V., Klesse, W. M., Niu, G., Taoka, N., Yamamoto, Y., Skibitzki, O., Barget, M. R., Zaumseil, P., von Känel, H., Schubert, M. A., Capellini, G., Schroeder, T.

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n-type Ge/Si antennas for THz sensing von Chavarin, C. A., Hardt, E., Gruessing, S., Skibitzki, O., Costina, Spirito, D., Seifert, W., Klesse, W., Manganelli, C. L., You, C., Flesch, J., Piehler, J., Missori, M., Baldassarre, L., Witzigmann, B., Capellini, G.

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Structural analysis of a phosphide-based epitaxial structure with a buried oxidized AlAs sacrificial layer von Englhard, M., Reuters, B., Baur, J., Klemp, C., Zaumseil, P., Schroeder, T., Skibitzki, O.

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Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth von Englhard, M., Klemp, C., Behringer, M., Rudolph, A., Skibitzki, O., Zaumseil, P., Schroeder, T.

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Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth von Zaumseil, P, Yamamoto, Y, Schubert, M A, Capellini, G, Skibitzki, O, Zoellner, M H, Schroeder, T

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GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study von Skibitzki, O., Hatami, F., Yamamoto, Y., Zaumseil, P., Trampert, A., Schubert, M. A., Tillack, B., Masselink, W. T., Schroeder, T.

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A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production von Englhard, M., Reuters, B., Michaelis, F.B., Behringer, M., Sundgren, P., Klemp, C., Skibitzki, O., Schroeder, T.

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Stable and selective self-assembly of α-lipoic acid on Ge(001) for biomolecule immobilization von Kazmierczak, M., Flesch, J., Mitzloff, J., Capellini, G., Klesse, W. M., Skibitzki, O., You, C., Bettenhausen, M., Witzigmann, B., Piehler, J., Schroeder, T., Guha, S.

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Control of Electron-State Coupling in Asymmetric Ge / Si − Ge Quantum Wells von Ciano, C., Virgilio, M., Montanari, M., Persichetti, L., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M.H., Skibitzki, O., Scalari, G., Faist, J., Paul, D.J., Scuderi, M., Nicotra, G., Grange, T., Birner, S., Capellini, G., De Seta, M.

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Graphene enhanced field emission from InP nanocrystals von Iemmo, L, A Di Bartolomeo, Giubileo, F, Luongo, G, Passacantando, M, Niu, G, Hatami, F, Skibitzki, O, Schroeder, T

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