Angular dependence of Raman scattering selection rules for long-wavelength pptical phonons in Short-Period GaAs/AlAs Superlattices1 von Volodin, V.A, Sachkov, V.A, Sinyukov, M.P

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Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations von Volodin, V. A., Sachkov, V. A., Sinyukov, M. P.

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Experimental observation of interface-phonon-plasmon mode in n-GaAs/i-GaAs heterostructure von Volodin, V.A., Sinyukov, M.P., Semyagin, B.R., Putyato, M.A., Preobrazhenskiy, V.V.

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Interaction of optical and interface phonons and their anisotropy in GaAs/AlAs superlattices: Experiment and calculations von Volodin, V. A., Sachkov, V. A., Sinyukov, M. P.

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Raman scattering in PbTe and PbSnTe films: In situ phase transformations von Volodin, V. A., Sinyukov, M. P., Shcheglov, D. V., Latyshev, A. V., Fedosenko, E. V.

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The project of using a compact SR source at the Siberian microelectronic center von Sinyukov, M. P., Makarov, O. A.

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Determination of the susceptibility mass of heavy holes in Pb 1− xSn xTe compounds by plasma reflection spectra von Neizvestny, I.G., Pusep, Yu.A., Sinyukov, M.P.

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The plasma edge in amorphous silicon films doped by metal atoms von Bizyaev, S.L., Makarov, O.A., Sinyukov, M.P.

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Influence of the Fermi-liquid interaction of free-carriers on the form of absorption edge in semiconductors von Pusep, Y.A., Sinyukov, M.P.

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Determination of the susceptibility mass of heavy holes in Pb1-xSnxTe compounds by plasma reflection spectra von NEIZVESTNY, I. G, PUSEP, Y. A, SINYUKOV, M. P

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Raman scattering from SiSi 0.5Ge 0.5 (111) superlattices von Talochkin, A.B., Markov, V.A., Pusep, Yu.A., Pchelyakov, O.P., Sinyukov, M.P.

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Raman scattering from Si-Si0.5Ge0.5 (111) superlattices von TALOCHKIN, A. B, MARKOV, V. A, PUSEP, YU. A, PCHELYAKOV, O. P, SINYUKOV, M. P

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