Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM von Navarro, Carlos, Lacord, Joris, Singh Parihar, Mukta, Adamu-Lema, Fikru, Meng Duan, Rodriguez, Noel, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Cristoloveanu, Sorin, Gamiz, Francisco

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Ultra Low Power Junctionless MOSFETs for Subthreshold Logic Applications von Parihar, Mukta Singh, Ghosh, Dipankar, Kranti, Abhinav

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The concept of electrostatic doping and related devices von Cristoloveanu, Sorin, Lee, Kyung Hwa, Park, Hyungjin, Parihar, Mukta Singh

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Single transistor latch phenomenon in junctionless transistors von Singh Parihar, Mukta, Ghosh, Dipankar, Kranti, Abhinav

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High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications von Ghosh, D., Parihar, M. S., Armstrong, G. A., Kranti, A.

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Occurrence of zero gate oxide thickness coefficient in junctionless transistors von Singh Parihar, Mukta, Ghosh, Dipankar, Kranti, Abhinav

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Bipolar snapback in junctionless transistors for capacitorless dynamic random access memory von Singh Parihar, Mukta, Ghosh, Dipankar, Alastair Armstrong, G., Kranti, Abhinav

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Enhanced sensitivity of double gate junctionless transistor architecture for biosensing applications von Parihar, Mukta Singh, Kranti, Abhinav

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FET as Capacitor-Less eDRAM Cell For High-Density Integration von Navarro, Carlos, Meng Duan, Singh Parihar, Mukta, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Kyunghwa Lee, Sampedro, Carlos, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Seong-Il Kim, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Riel, Heike, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Gamiz, Francisco

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Revisiting the doping requirement for low power junctionless MOSFETs von Parihar, Mukta Singh, Kranti, Abhinav

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Back bias induced dynamic and steep subthreshold swing in junctionless transistors von Parihar, Mukta Singh, Kranti, Abhinav

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Bipolar effects in unipolar junctionless transistors von Parihar, Mukta Singh, Ghosh, Dipankar, Armstrong, G. Alastair, Yu, Ran, Razavi, Pedram, Kranti, Abhinav

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A comprehensive model on field-effect pnpn devices (Z2-FET) von Taur, Yuan, Lacord, Joris, Parihar, Mukta Singh, Wan, Jing, Martinie, Sebastien, Lee, Kyunghwa, Bawedin, Maryline, Barbe, Jean-Charles, Cristoloveanu, Sorin

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Insight into carrier lifetime impact on band-modulation devices von Parihar, Mukta Singh, Lee, Kyung Hwa, Park, Hyung Jin, Lacord, Joris, Martinie, Sébastien, Barbé, Jean-Charles, Xu, Yue, El Dirani, Hassan, Taur, Yuan, Cristoloveanu, Sorin, Bawedin, Maryline

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Back-gate effects and mobility characterization in junctionless transistor von Parihar, Mukta Singh, Liu, Fanyu, Navarro, Carlos, Barraud, Sylvain, Bawedin, Maryline, Ionica, Irina, Kranti, Abhinav, Cristoloveanu, Sorin

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Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration von Navarro, Carlos, Duan, Meng, Parihar, Mukta Singh, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Lee, Kyunghwa, Sampedro, Carlos, Cheng, Binjie, El Dirani, Hassan, Barbé, Jean-Charles, Fonteneau, Pascal, Kim, Seong-Il, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Riel, Heike, Wells, Paul, Kim, Yong-Tae, Asenov, Asen, Gamiz, Francisco

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Optimally designed moderately inverted double gate SOI MOSFETs for low-power RFICs von Ghosh, Dipankar, Parihar, Mukta Singh, Armstrong, G Alastair, Kranti, Abhinav

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Bipolar Attributes of Unipolar Junctionless MOSFETs von Parihar, Mukta Singh, Kranti, Abhinav

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Optimizing nanoscale MOSFET architecture for low power analog/RF applications von Ghosh, D., Parihar, M. S., Kranti, A.

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Single transistor latch phenomena in Junctionless Nanotransistors von Parihar, M. S., Ghosh, D., Armstrong, G. A., Kranti, A.

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