Formation of amine groups on the surface of GaN: A method for direct biofunctionalization von Stine, R., Simpkins, B.S., Mulvaney, S.P., Whitman, L.J., Tamanaha, C.R.

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Gallium-based catalysts for growth of GaN nanowires von Simpkins, B.S., Ericson, L.M., Stroud, R.M., Pettigrew, K.A., Pehrsson, P.E.

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Nature of luminescence and strain in gallium nitride nanowires von Mastro, M.A., Maximenko, S., Gowda, M., Simpkins, B.S., Pehrsson, P.E., Long, J.P., Makinen, A.J., Freitas, J.A., Hite, J.K., Eddy, C.R., Kim, J.

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Defects in nitride semiconductors: From nanoscale imaging to macroscopic device behavior von Simpkins, B.S., Zhang, H., Yu, E.T.

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Nanoscale characterization and mitigation of defects in nitride semiconductors von Yu, E.T., Miller, E.J., Schaadt, D.M., Simpkins, B.S.

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