The effect of dose rate on ion implanted impurity profiles in silicon von Tian, S., Yang, S.-H., Morris, S., Parab, K., Tasch, A.F., Kamenitsa, D., Reece, R., Freer, B., Simonton, R.B., Magee, C.

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The use of self-implanted amorphized silicon substrates to eliminate channeling effects in low energy boron implants von Simonton, R.B.

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Process architectures using MeV implanted blanket buried layers for latch-up improvements on bulk silicon von Rubin, L.M., Simonton, R.B., Wilson, S.D., Morris, W.

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A technique for determining beam parallelism on a medium current implanter using the Therma-Wave Therma-Probe von Kamenitsa, D.E., Rathmell, R.D., McCoy, W.R., Lillian, P.K., King, M.L., Simonton, R.B.

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Paradoxical boron profile broadening caused by implantation through a screen oxide layer von Park, C., Klein, K.M., Tasch, A.F., Simonton, R.B., Lux, G.E.

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Diversifying experiences enhance cognitive flexibility von Ritter, Simone M., Damian, Rodica Ioana, Simonton, Dean Keith, van Baaren, Rick B., Strick, Madelijn, Derks, Jeroen, Dijksterhuis, Ap

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