Ohm's Law Survives to the Atomic Scale von Weber, B., Mahapatra, S., Ryu, H., Lee, S., Fuhrer, A., Reusch, T. C. G., Thompson, D. L., Lee, W. C. T., Klimeck, G., Hollenberg, L. C. L., Simmons, M. Y.

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Spatially resolving valley quantum interference of a donor in silicon von Salfi, J., Mol, J. A., Rahman, R., Klimeck, G., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S.

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Spatial metrology of dopants in silicon with exact lattice site precision von Usman, M., Bocquel, J., Salfi, J., Voisin, B., Tankasala, A., Rahman, R., Simmons, M. Y., Rogge, S., Hollenberg, L. C. L.

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Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture von McKibbin, S R, Scappucci, G, Pok, W, Simmons, M Y

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Atomically precise placement of single dopants in si von Schofield, S R, Curson, N J, Simmons, M Y, Ruess, F J, Hallam, T, Oberbeck, L, Clark, R G

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Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers von Scappucci, G, Capellini, G, Klesse, W M, Simmons, M Y

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Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy von Ruess, Frank J, Oberbeck, Lars, Simmons, Michelle Y, Goh, Kuan Eng J, Hamilton, Alex R, Hallam, Toby, Schofield, Steven R, Curson, Neil J, Clark, Robert G

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Stacking of 2D Electron Gases in Ge Probed at the Atomic Level and Its Correlation to Low-Temperature Magnetotransport von Scappucci, G, Klesse, W. M, Hamilton, A. R, Capellini, G, Jaeger, D. L, Bischof, M. R, Reidy, R. F, Gorman, B. P, Simmons, M. Y

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Fano factor reduction on the 0.7 conductance structure of a ballistic one-dimensional wire von ROCHE, P, SEGALA, J, GLATTLI, D. C, NICHOLLS, J. T, PEPPER, M, GRAHAM, A. C, THOMAS, K. J, SIMMONS, M. Y, RITCHIE, D. A

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Dual-temperature encapsulation of phosphorus in germanium δ ‐layers toward ultra-shallow junctions von Scappucci, G., Capellini, G., Klesse, W.M., Simmons, M.Y.

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Possible Spin Polarization in a One-Dimensional Electron Gas von Thomas, KJ, Nicholls, JT, Simmons, MY, Pepper, M, Mace, DR, Ritchie, DA

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Precession and motional slowing of spin evolution in a high mobility two-dimensional electron gas von Brand, M A, Malinowski, A, Karimov, O Z, Marsden, P A, Harley, R T, Shields, A J, Sanvitto, D, Ritchie, D A, Simmons, M Y

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Phosphine dissociation on the Si(001) surface von WILSON, H. F, WARSCHKOW, O, MARKS, N. A, SCHOFIELD, S. R, CURSON, N. J, SMITH, P. V, RADNY, M. W, MCKENZIE, D. R, SIMMONS, M. Y

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Influence of doping density on electronic transport in degenerate Si:P δ -doped layers von Goh, K. E. J., Oberbeck, L., Simmons, M. Y., Hamilton, A. R., Butcher, M. J.

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Interaction effects in a one-dimensional constriction von Thomas, K. J., Nicholls, J. T., Appleyard, N. J., Simmons, M. Y., Pepper, M., Mace, D. R., Tribe, W. R., Ritchie, D. A.

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Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication von Lee, W.C.T., Bishop, N., Thompson, D.L., Xue, K., Scappucci, G., Cederberg, J.G., Gray, J.K., Han, S.M., Celler, G.K., Carroll, M.S., Simmons, M.Y.

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Observation of Charge Transport by Negatively Charged Excitons von Sanvitto, Daniele, Pulizzi, Fabio, Shields, Andrew J., Peter C. M. Christianen, Holmes, Stuart N., Simmons, Michelle Y., Ritchie, David A., Maan, Jan C., Pepper, Michael

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Interaction effects at crossings of spin-polarized one-dimensional subbands von Graham, A C, Thomas, K J, Pepper, M, Cooper, N R, Simmons, M Y, Ritchie, D A

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Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy von Oberbeck, L., Curson, N. J., Hallam, T., Simmons, M. Y., Bilger, G., Clark, R. G.

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Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer von Oberbeck, L., Curson, N. J., Simmons, M. Y., Brenner, R., Hamilton, A. R., Schofield, S. R., Clark, R. G.

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