Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors von Alzeidan, A., Cantalice, T.F., Vallejo, K.D., Gajjela, R.S.R., Hendriks, A.L., Simmonds, P.J., Koenraad, P.M., Quivy, A.A.

Volltext

Tensile strained island growth at step-edges on GaAs(110) von Simmonds, P. J., Lee, M. L.

Volltext

The role of the pituitary gland and ACTH in the regulation of mRNAs encoding proteins essential for adrenal steroidogenesis in the late-gestation ovine fetus von Simmonds, PJ, Phillips, ID, Poore, KR, Coghill, ID, Young, IR, Canny, BJ

Volltext

Propagation characteristics of a focused laser beam in a strontium barium niobate photorefractive crystal under reverse external electric field von Guo, Q L, Liang, B L, Wang, Y, Deng, G Y, Jiang, Y H, Zhang, S H, Fu, G S, Simmonds, P J

Volltext

High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction von Alzeidan, A., Cantalice, T.F., Sautter, K.E., Vallejo, K.D., Simmonds, P.J., Quivy, A.A.

Volltext

Quantum transport in In0.75Ga0.25As quantum wires von Simmonds, P. J., Sfigakis, F., Beere, H. E., Ritchie, D. A., Pepper, M., Anderson, D., Jones, G. A. C.

Volltext

Bychkov–Rashba dominated band structure in an In0.75Ga0.25As–In0.75Al0.25As device with spin-split carrier densities of <1011 cm−2 von Holmes, S N, Simmonds, P J, Beere, H E, Sfigakis, F, Farrer, I, Ritchie, D A, Pepper, M

Volltext

Metamorphic InGaP on GaAs and GaP for wide-bandgap photovoltaic junctions von Simon, J, Tomasulo, S, Simmonds, P J, Romero, M, Lee, M L

Volltext

Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells von Simon, J., Tomasulo, S., Simmonds, P. J., Romero, M., Lee, M. L.

Volltext

Advances in actinide thin films: synthesis, properties, and future directions von Vallejo, K D, Kabir, F, Poudel, N, Marianetti, C A, Hurley, D H, Simmonds, P J, Dennett, C A, Gofryk, K

Volltext

Graphitized carbon on GaAs(100) substrates von Simon, J., Simmonds, P. J., Woodall, J. M., Lee, M. L.

Volltext

Spin-orbit coupling in an In0.52Ga0.48As quantum well with two populated subbands von Simmonds, P. J., Holmes, S. N., Beere, H. E., Ritchie, D. A.

Volltext

Growth-temperature optimization for low-carrier-density In0.75Ga0.25As-based high electron mobility transistors on InP von Simmonds, P. J., Beere, H. E., Ritchie, D. A., Holmes, S. N.

Volltext

Molecular beam epitaxy of high mobility In0.75Ga0.25As for electron spin transport applications von Simmonds, P. J., Holmes, S. N., Beere, H. E., Farrer, I., Sfigakis, F., Ritchie, D. A., Pepper, M.

Volltext

Spin-orbit coupling in an In 0.52 Ga 0.48 As quantum well with two populated subbands von Simmonds, P. J., Holmes, S. N., Beere, H. E., Ritchie, D. A.

Volltext

Bychkov–Rashba dominated band structure in an In 0.75 Ga 0.25 As–In 0.75 Al 0.25 As device with spin-split carrier densities of <10 11 cm −2 von Holmes, S N, Simmonds, P J, Beere, H E, Sfigakis, F, Farrer, I, Ritchie, D A, Pepper, M

Volltext

Bychkov-Rashba dominated band structure in an In0.75Ga0.25As-In0.75Al0.25As device with spin-split carrier densities of < 1011cm-2 von Holmes, S N, Simmonds, P J, Beere, H E, Sfigakis, F, Farrer, I, Ritchie, D A, Pepper, M

Volltext

Growth-temperature optimization for low-carrier-density In 0.75 Ga 0.25 As -based high electron mobility transistors on InP von Simmonds, P. J., Beere, H. E., Ritchie, D. A., Holmes, S. N.

Volltext

Quantum transport in In 0.75 Ga 0.25 As quantum wires von Simmonds, P. J., Sfigakis, F., Beere, H. E., Ritchie, D. A., Pepper, M., Anderson, D., Jones, G. A. C.

Volltext

Wide-bandgap metamorphic InyGa1-yP solar cells von Tomasulo, S., Simon, J., Simmonds, P. J., Biagiotti, J., Lee, M. L.

Volltext