Microscopic investigation of the strain distribution in InGaAs/GaAs quantum well structures grown by molecular beam epitaxy von Proietti, M.G., Martelli, F., Turchini, S., Alagna, L., Bruni, M.R., Prosperi, T., Simeone, M.G., Garcia, J.

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InGaAs/GaAs strained single quantum well characterization by high resolution X-ray diffraction von Ferrari, C., Bruni, M.R., Martelli, F., Simeone, M.G.

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Optical properties of stepped InxGa1−xAs/GaAs quantum wells von D'Andrea, A, Tomassini, N, Ferrari, L, Righini, M, Selci, S, Bruni, M.R, Schiumarini, D, Simeone, M.G

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Cation ordering and crystal structures in Aga2X4 compounds (GoGa2S4, CdGa2S4, HgGa2Se4, HgGa2Te4) von GASTALDI, L, SIMEONE, M. G, VITICOLI, S

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Depth profiling of InxGa1-xAs/GaAs superlattice von BRUNI, M. R, KACIULIS, S, MATTOGNO, G, SIMEONE, M. G, VITICOLI, S, MARTELLI, F

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Electron microscopy and X-ray diffraction determinations of strain release in InGaAs/GaAs superlattices grown by molecular beam epitaxy von SALVIATI, G, FERRARI, C, LAZZARINI, L, NASI, L, NORMAN, C. E, BRUNI, M. R, SIMEONE, M. G, MARTELLI, F

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Crystal growth and characterization of MnxCd1-xGa2Se4: a new family of diluted magnetic semiconductors von SIMEONE, M. G, VITICOLI, S

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Structural and magnetic properties of layer compounds: CoGaInS4 von BATTISTONI, C, GASTALDI, L, MATTOGNO, G, SIMEONE, M. G, VITICOLI, S

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Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures von Ferrari, C., Franzosi, P., Lazzarini, L., Salviati, G., Berti, M., Drigo, A.V., Mazzer, M., Romanato, F., Bruni, M.R., Simeone, M.G.

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Thermodynamic study of molecular beam epitaxial growth of InGaAs/GaAs strained layer superlattices von Bruni, M.R., Lapiccirella, A., Scavia, G., Simeone, M.G., Viticoli, S., Tomassini, N.

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Above barrier exciton confinement in InGaAs/GaAs multiple-quantum-well structures von Capizzi, M., Polimeni, A., Frova, A., Martelli, F., Ozanyan, K.B., Worren, T., Bruni, M.R., Simeone, M.G.

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Crystal growth of MnxCd1-xGa2Se4 (0.00≤x≤0.20) von SIMEONE, M. G, VITICOLI, S

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Structural properties of layer Cr0.87Ga1.80S4 compound von GASTALDI, L, GUITTARD, M, SIMEONE, M. G, TOMAS, A, VITICOLI, S

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Optical properties of stepped InxGa1−xAs/GaAs quantum wells von D’Andrea, A., Tomassini, N., Ferrari, L., Righini, M., Selci, S., Bruni, M. R., Schiumarini, D., Simeone, M. G.

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Structural properties of Zn-diffused InP layers von Bocchi, C., Franzosi, P., Pelosi, C., Maslov, A. V., Mukhamedzhanov, E. Kh, Gambacorti, N., Simeone, M. G., Audino, R.

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Normalized reflection spectra in InxGa1-xAs/GaAs strained quantum wells: Structure and electronic properties von D'Andrea, A., Tomassini, N., Ferrari, L., Righini, M., Selci, S., Bruni, M. R., Simeone, M. G.

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Linear and nonlinear optical properties of stepped InxGa1−xAs/GaAs quantum wells von Tomassini, N., D’Andrea, A., Righini, M., Selci, S., Calcagnile, L., Cingolani, R., Schiumarini, D., Simeone, M. G.

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Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures von Bruni, M.R., Gambacorti, N., Kačiulis, S., Mattogno, G., Simeone, M.G., Quagliano, L.G., Tomassini, N., Jusserand, B.

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Two-dimensional magnetic behaviour of CrxGa2.67 − xS4 (0.87 ⩽ x ⩽ 1.00) layered compounds von Gastaldi, L., Simeone, M.G., Viticoli, S., Tomas, A., Guittard, M., Winterberger, M.

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Second Harmonic Generation in Stepped InAsGaAs/GaAs Quantum Wells von D'Andrea, A., Tomassini, N., Ferrari, L., Righini, M., Selci, S., Bruni, M. R., Schiumarini, D., Simeone, M. G.

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