Multi-component high- K gate dielectrics for the silicon industry von Manchanda, L, Morris, M.D, Green, M.L, van Dover, R.B, Klemens, F, Sorsch, T.W, Silverman, P.J, Wilk, G, Busch, B, Aravamudhan, S

Volltext

Scanning tunneling microscope instrumentation von Kuk, Y., Silverman, P. J.

Volltext

Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain von Xie, YH, Gilmer, GH, Roland, C, Silverman, PJ, Buratto, SK, Cheng, JY, Fitzgerald, EA, Kortan, AR, Schuppler, S, Marcus, MA, Citrin, PH

Volltext

Precursor ion damage and angular dependence of single event gate rupture in thin oxides von Sexton, F.W., Fleetwood, D.M., Shaneyfelt, M.R., Dodd, P.E., Hash, G.L., Schanwald, L.P., Loemker, R.A., Krisch, K.S., Green, M.L., Weir, B.E., Silverman, P.J.

Volltext

A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance von Alam, M.A., Weir, B.E., Silverman, P.J.

Volltext

Gate oxide reliability projection to the sub-2 nm regime von Weir, B E, Alam, M A, Bude, J D, Silverman, P J, Ghetti, A, Baumann, F, Diodato, P, Monroe, D, Sorsch, T, Timp, G L, Ma, Y, Brown, M M, Hamad, A, Hwang, D, Mason, P

Volltext

Soft breakdown at all positions along the N-MOSFET von Weir, B.E., Alam, M.A., Silverman, P.J.

Volltext

A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling von Alam, M.A., Weir, B.E., Silverman, P.J.

Volltext

Fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si von XIE, Y. H, FITZGERALD, E. A, MONROE, D, SILVERMAN, P. J, WATSON, G. P

Volltext

Oxygen chemisorption on Cu(110): an atomic view by scanning tunneling microscopy von CHUA, F. M, KUK, Y, SILVERMAN, P. J

Volltext

Role of tip structure in scanning tunneling microscopy von KUK, Y, SILVERMAN, P. J

Volltext

Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy von Chang, J. P., Green, M. L., Donnelly, V. M., Opila, R. L., Eng, J., Sapjeta, J., Silverman, P. J., Weir, B., Lu, H. C., Gustafsson, T., Garfunkel, E.

Volltext

Electrical properties of cobalt and copper contamination in processed silicon von BENTON, J. L, BOONE, T, JACOBSON, D. C, SILVERMAN, P. J, ROSAMILIA, J. M, RAFFERTY, C. S, WEINZIERL, Steve, VU, Bao

Volltext

Characterization of compositionally graded Si1-xGex alloy layers by photoluminescence spectroscopy and by cathodoluminescence spectroscopy and imaging von HIGGS, V, LIGHTOWLERS, E. C, FITZGERALD, E. A, XIE, Y. H, SILVERMAN, P. J

Volltext

Optical interactions in the junction of a scanning tunneling microscope von KUK, Y, BECKER, R. S, SILVERMAN, P. J, KOCHANSKI, G. P

Volltext

Ultra-thin gate oxide reliability projections von Weir, B.E., Alam, M.A., Silverman, P.J., Baumann, F., Monroe, D., Bude, J.D., Timp, G.L., Hamad, A., Ma, Y., Brown, M.M., Hwang, D., Sorsch, T.W., Ghetti, A., Wilk, G.D.

Volltext

Influence of Ga vs As prelayers on GaAs/Ge growth morphology von XU, Q, HSU, J. W. P, FITZGERALD, E. A, KUO, J. M, XIE, Y. H, SILVERMAN, P. J

Volltext

Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS von GREEN, M. L, SORSCH, T. W, TIMP, G. L, MULLER, D. A, WEIR, B. E, SILVERMAN, P. J, MOCCIO, S. V, KIM, Y. O

Volltext

Mechanisms of current rectification in an STM tunnel junction and the measurement of an operational tunneling time von Nguyen, H.Q., Cutler, P.H., Feuchtwang, T.E., Huang, Z.-H., Kuk, Y., Silverman, P.J., Lucas, A.A., Sullivan, T.E.

Volltext

Reconstruction of the W (001) Surface and Its Reordering by Hydrogen Adsorption, Studied by MeV Ion Scattering von Stensgaard, I., Feldman, L. C., Silverman, P. J.

Volltext