Evolution of crystal structures in GeTe during phase transition von Jeong, Kwangsik, Park, Seungjong, Park, Dambi, Ahn, Min, Han, Jeonghwa, Yang, Wonjun, Jeong, Hong-Sik, Cho, Mann-Ho

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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput von LEE, Kwang-Jin, CHO, Beak-Hyung, PARK, Mu-Hui, RO, Yu-Hwan, CHOI, Joon-Yong, KIM, Ki-Sung, KIM, Young-Ran, SHIN, In-Cheol, LIM, Ki-Won, CHO, Ho-Keun, CHOI, Chang-Han, CHUNG, Won-Ryul, CHO, Woo-Yeong, KIM, Du-Eung, YOON, Yong-Jin, YU, Kwang-Suk, JEONG, Gi-Tae, JEONG, Hong-Sik, KWAK, Choong-Keun, KIM, Chang-Hyun, KIM, Kinam, KANG, Sangbeom, CHOI, Byung-Gil, OH, Hyung-Rok, LEE, Chang-Soo, KIM, Hye-Jin, PARK, Joon-Min, QI WANG

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Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process von Park, Dambi, Park, Sungjin, Jeong, Kwangsik, Jeong, Hong-Sik, Song, Jea Yong, Cho, Mann–Ho

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In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides von Song, Se Ahn, Zhang, Wei, Sik Jeong, Hong, Kim, Jin-Gyu, Kim, Youn-Joong

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Laser irradiation-induced modification of the amorphous phase in GeTe films: the role of intermediate Ge–Te bonding in the crystallization mechanism von Park, Seung Jong, Park, Hanjin, Jang, Moon Hyung, Ahn, Min, Yang, Won Jun, Han, Jeong Hwa, Jeong, Hong-Sik, Kim, Cheol-Woon, Kwon, Young-Kyun, Cho, Mann-Ho

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Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices von LEE, Kong-Soo, HAN, Jae-Jong, LIM, Hanjin, NAM, Seokwoo, CHUNG, Chilhee, JEONG, Hong-Sik, PARK, Hyunho, JEONG, Hanwook, CHOI, Byoungdeog

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Enhanced write performance of a 64-mb phase-change random access memory von OH, Hyung-Rok, CHO, Beak-Hyung, JEONG, Gi-Tae, JEONG, Hong-Sik, KIM, Kinam, WOO YEONG CHO, KANG, Sangbeom, CHOI, Byung-Gil, KIM, Hye-Jin, KIM, Ki-Sung, KIM, Du-Eung, KWAK, Choong-Keun, BYUN, Hyun-Geun

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Evolution of the surface state in Bi2Se2Te thin films during phase transition von Choi, Hyejin, Kim, Tae Hyeon, Chae, Jimin, Baeck, Juheyuck, Kee, Chul-Sik, Jeong, Kwang-Ho, Jeong, Hong-Sik, Kang, Chul, Cho, Mann-Ho

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Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials von BORISENKO, Konstantin B, YIXIN CHEN, COCKAYNE, David J. H, SE AHN SONG, HONG SIK JEONG

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Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer von Yun Ki Lee, Byong Sun Chun, Young Keun Kim, Injun Hwang, Wanjun Park, Taewan Kim, Won-Cheol Jeong, Lee, J., Hong Sik Jeong

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Natural Organic Matter Affects the Treatment of Mine Tailings through Bioleaching Processes von Kim, Hee Jae, Hong, Jeong Sik, Silva, René A., Kim, Hyun Jung, Park, Jeong Hyun, Park, Jay Hyun

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Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory von Jung, Ju-Young, Joo, Heung-Jin, Park, Jung-Hoon, Kang, Seung-Kuk, Kim, Hwi-San, Choi, Do-Yeon, Kim, Jai-Hyun, Lee, Eun-Sun, Hong, Young-Ki, Kim, Hyun-Ho, Jung, Dong-Jin, Kang, Young-Min, Lee, Sung-Yung, Jeong, Hong-Sik, Kim, Kinam

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Chemical state and atomic structure of Ge2Sb2Te5 system for nonvolatile phase-change random access memory von Jung, Min-Cherl, Kim, Ki-Hong, Lee, Young-Mi, Eom, Jae-Hyeon, Im, Jino, Yoon, Young-Gui, Ihm, Jisoon, Song, Se Ahn, Jeong, Hong-Sik, Shin, Hyun-Joon

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Highly Reliable Ring-Type Contact for High-Density Phase Change Memory von Jeong, Chang-Wook, Ahn, Su-Jin, Hwang, Young-Nam, Song, Yoon-Jong, Oh, Jae-Hee, Lee, Su-Youn, Lee, Se-Ho, Ryoo, Kyung-Chang, Park, Jong-Hyun, Park, Jae-Hyun, Shin, Jae-Min, Yeung, Fai, Jeong, Won-Cheol, Kim, Jeong-In, Koh, Gwan-Hyeob, Jeong, Gi-Tae, Jeong, Hong-Sik, Kim, Kinam

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Selective Epitaxial Growth of Silicon for Vertical Diode Application von Lee, Kong-Soo, Yoo, Dae-Han, Han, Jae-Jong, Hyung, Yong-Woo, Kim, Seok-Sik, Kang, Chang-Jin, Jeong, Hong-Sik, Moon, Joo-Tae, Park, Hyunho, Jeong, Hanwook, Kim, Kwang-Ryul, Choi, Byoungdeog

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The Enhancement of Etch Rate of Silicon by Heavy Doping of Phosphorus and Arsenic Atoms during Cyclic Selective Epitaxial Growth of Silicon von Lee, Kong-Soo, Kang, Yoongoo, An, Ho-Kyun, Jeong, Seonghoon, Han, Jae-Jong, Kim, Bonghyun, Nam, Seokwoo, Kang, Ho-Kyu, Jeong, Hong-Sik, Chung, Chilhee, Park, Hyunho, Choi, Byoungdeog

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Selective Epitaxial Growth of Silicon Layer Using Batch-Type Equipment for Vertical Diode Application to Next Generation Memories von Lee, Kong-Soo, Yoo, Dae-Han, Yoo, Young-Sub, Han, Jae-Jong, Kim, Seok-Sik, Jeong, Hong-Sik, Kang, Chang-Jin, Moon, Joo-Tae, Park, Hyunho, Jeong, Hanwook, Kim, Kwang-Ryul, Choi, Byoungdeog

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Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires von Park, Sungjin, Park, Dambi, Jeong, Kwangsik, Kim, Taeok, Park, SeungJong, Ahn, Min, Yang, Won Jun, Han, Jeong Hwa, Jeong, Hong Sik, Jeon, Seong Gi, Song, Jae Yong, Cho, Mann-Ho

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Ring Contact Electrode Process for High Density Phase Change Random Access Memory von Ryoo, Kyung-Chang, Song, Yoon Jong, Shin, Jae-Min, Park, Sang-Su, Lim, Dong-Won, Kim, Jae-Hyun, Park, Woon-Ik, Sim, Ku-Ri, Jeong, Ji-Hyun, Kang, Dae-Hwan, Kong, Jun-Hyuck, Jeong, Chang-Wook, Oh, Jae-Hee, Park, Jae-Hyun, Kim, Jeong-In, Oh, Yong-Tae, Kim, Ji-Sun, Eun, Seong-Ho, Lee, Kwang-Woo, Koh, Seong-Pil, Fai, Yung, Koh, Gwan-Hyob, Jeong, Gi-Tae, Jeong, Hong-Sik, Kim, Kinam

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Evolution of the surface state in Bi2Se2Te thin films during phase transitionElectronic supplementary information (ESI) available: RBS results as a function of annealing temperatur... von Choi, Hyejin, Kim, Tae Hyeon, Chae, Jimin, Baeck, Juheyuck, Kee, Chul-Sik, Jeong, Kwang-Ho, Jeong, Hong-Sik, Kang, Chul, Cho, Mann-Ho

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