Greater than 20% radiant heat conversion efficiency of a thermophotovoltaic radiator/module system using reflective spectral control von Wernsman, B., Siergiej, R.R., Link, S.D., Mahorter, R.G., Palmisiano, M.N., Wehrer, R.J., Schultz, R.W., Schmuck, G.P., Messham, R.L., Murray, S., Murray, C.S., Newman, F., Taylor, D., DePoy, D.M., Rahmlow, T.

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Advances in SiC materials and devices: an industrial point of view von Siergiej, R.R, Clarke, R.C, Sriram, S, Agarwal, A.K, Bojko, R.J, Morse, A.W, Balakrishna, V, MacMillan, M.F, Burk, Jr, A.A, Brandt, C.D

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MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion von Murray, Susan L, Newman, Frederick D, Murray, Christopher S, Wilt, David M, Wanlass, Mark W, Ahrenkiel, Phil, Messham, Rowan, Siergiej, Richard R

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Thermophotovoltaic system testing von Mahorter, R G, Wernsman, B, Thomas, R M, Siergiej, R R

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700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's) von Agarwal, A.K., Casady, J.B., Rowland, L.B., Seshadri, S., Siergiej, R.R., Valek, W.F., Brandt, C.D.

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Observation of near-interface oxide traps with the charge-pumping technique von Paulsen, R.E., Siergiej, R.R., French, M.L., White, M.H.

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4H-SiC power devices for use in power electronic motor control von Casady, J.B, Agarwal, A.K, Seshadri, S, Siergiej, R.R, Rowland, L.B, MacMillan, M.F, Sheridan, D.C, Sanger, P.A, Brandt, C.D

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RF performance of SiC MESFET's on high resistivity substrates von Sriram, S., Clarke, R.C., Burk, A.A., Hobgood, H.M., McMullin, P.G., Orphanos, P.A., Siergiej, R.R., Smith, T.J., Brandt, C.D., Driver, M.C., Hopkins, R.H.

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SiC and GaN wide bandgap semiconductor materials and devices von Burk, A.A, O'Loughlin, M.J, Siergiej, R.R, Agarwal, A.K, Sriram, S, Clarke, R.C, MacMillan, M.F, Balakrishna, V, Brandt, C.D

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Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K von Casady, J.B., Cressler, J.D., Dillard, W.C., Johnson, R.W., Agarwal, A.K., Siergiej, R.R.

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Surface roughness of reactive ion etched 4H-SiC in SF6/O2 and CHF3/H2/O2 plasmas von CASADY, J. B, MANI, S. S, SIERGIEJ, R. R, URBAN, W, BALAKRISHNA, V, SANGER, P. A, BRANDT, C. D

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MICROX-an all-silicon technology for monolithic microwave integrated circuits von Hanes, M.H., Agarwal, A.K., O'Keeffe, T.W., Hobgood, H.M., Szedon, J.R., Smith, T.J., Siergiej, R.R., McMullin, P.G., Nathanson, H.C., Driver, M.C., Thomas, R.N.

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Low frequency noise in 6H-SiC MOSFET's von Casady, J.B., Dillard, W., Johnson, R.W., Agarwal, A.K., Siergiej, R.R., Wagner, W.E.

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4H-SiC Gate Turn-Off (GTO) Thyristor Development von Barrows, J., Sanger, P.A., Piccone, D., Agarwal, Anant K., Rowland, L.B., Seshadri, S., Casady, Jeff B., Mani, S., Siergiej, R.R., Brandt, C.D.

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A novel method to characterize MOS transistors with mixed gate dielectric technologies von Siergiej, R.R., White, M.H.

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Accuracy of computer-simulated gas chromatographic separations based on a linear elution strength model von Roman, M.C., Siergiej, R.W.

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Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination von Merrett, J. Neil, Cressler, J.D., Ellis, C., Sheridan, David C., Niu, G., Tin, Chin Che, Siergiej, R.R.

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SiC for Microwave Power Transistors von Sriram, S., Siergiej, R. R., Clarke, R. C., Agarwal, A. K., Brandt, C. D.

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A novel substrate hot electron and hole injection structure with a double-implanted buried-channel MOSFET von Yoon, S., Siergiej, R., White, M.H.

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Demonstration of Deep (80μm) RIE Etching of SiC for MEMS and MMIC Applications von Seiler, C.F., Cressler, J.D., Strong, R.M., Ellis, C.E., Sheridan, David C., Urban, W.M., Buhay, H., Casady, Jeff B., Siergiej, R.R., Valek, W.F.

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