A novel approach for measuring ultra-thin, buried SiO2 film thickness von Jiang, Z. X., Sieloff, D. D.

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Monitoring of rapid thermal anneal with secondary ion mass spectrometry von Jiang, Z. X., Ravi, A., Breeden, T., Khmelnitskiy, K., Duncan, A., Huynh, D., Butler, S., Granados, B., Acker, D., Luebbe, J., Sieloff, D., Bolton, S., Prieto, G.

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Toward accurate characterization of nitrogen depth profiles in ultrathin oxynitride films von Jiang, Z. X., Kim, K., Sieloff, D. D., Luo, T. Y., Varghese, A., Triyoso, D. H., Guenther, T., Robichaud, B., Benavides, J.

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Characterization of HfO2 dielectric films with low energy SIMS von JIANG, Z. X, KIM, K, LERMA, J, SIELOFF, D, TSENG, H, HEGDE, R. I, LUO, T. Y, YANG, J. Y, TRIYOSO, D. H, TOBIN, P. J

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Quantitative SIMS analysis of SiGe composition with low energy O2+ beams von JIANG, Z. X, KIM, K, LERMA, J, CORBETT, A, SIELOFF, D, KOTTKE, M, GREGORY, R, SCHAUER, S

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Ultrahigh resolution secondary ion mass spectrometry profiling with oblique O 2 + beams below 200 eV von Jiang, Z. X., Lerma, J., Sieloff, D., Lee, J. J., Backer, S., Bagchi, S., Conner, J.

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Characterization of nitrogen distribution in HfO2 with low energy secondary ion mass spectrometry von Jiang, Z. X., Kim, K., Lerma, J., Sieloff, D., Luo, T. Y., Yang, J. Y., Triyoso, D., Tseng, H., Tobin, P., Ramani, N.

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Optimal low-energy SIMS conditions for characterizing ZrO2/Si interfaces von Jiang, Z. X., Chen, S., Sieloff, D.

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Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films von Liu, Chun-Li, Jiang, Z. X., Hegde, R. I., Sieloff, D. D., Rai, R. S., Gilmer, D. C., Hobbs, C. C., Tobin, P. J., Lu, Shifeng

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A novel approach for measuring ultra‐thin, buried SiO 2 film thickness von Jiang, Z. X., Sieloff, D. D.

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Reduction in surface roughness during secondary ion mass spectrometry depth profiling with an ion-milling method von Jiang, Z. X., Backer, S., Chen, S., Lerma, J., Guenther, T., Lee, J. J., Sieloff, D.

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Quantitative SIMS analysis of SiGe composition with low energy O 2 + beams von Jiang, Z.X., Kim, K., Lerma, J., Corbett, A., Sieloff, D., Kottke, M., Gregory, R., Schauer, S.

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Low energy secondary ion mass spectrometry with sub-keV O 2 + beams at glancing incidence von Jiang, Z. X., Kim, K., Guenther, T., Robichaud, B., Benavides, J., Contreras, L., Sieloff, D. D.

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Low energy secondary ion mass spectrometry with sub-keV O2+ beams at glancing incidence von Jiang, Z. X., Kim, K., Guenther, T., Robichaud, B., Benavides, J., Contreras, L., Sieloff, D. D.

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Low energy secondary ion mass spectrometry with sub-keV O 2 + beamsat glancing incidence von Jiang, Z. X., Kim, K., Guenther, T., Robichaud, B., Benavides, J., Contreras, L., Sieloff, D. D.

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Characterization of HfO 2 dielectric films with low energy SIMS von Jiang, Z.X., Kim, K., Lerma, J., Sieloff, D., Tseng, H., Hegde, R.I., Luo, T.Y., Yang, J.Y., Triyoso, D.H., Tobin, P.J.

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Studies of point defect/dislocation loop interaction processes in silicon von Jones, K.S., Robinson, H.G., Listebarger, J., Chen, J., Liu, J., Herner, B., Park, H., Law, M.E., Sieloff, D., Slinkman, J.A.

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Optimal low‐energy SIMS conditions for characterizing ZrO 2 /Si interfaces von Jiang, Z. X., Chen, S., Sieloff, D.

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Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer von Listebarger, J. K., Robinson, H. G., Jones, K. S., Law, M. E., Sieloff, D. D., Slinkman, J. A., Sedgwick, T. O.

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Characterization of nitrogen distribution in HfO 2 with low energy secondary ion mass spectrometry von Jiang, Z. X., Kim, K., Lerma, J., Sieloff, D., Luo, T. Y., Yang, J. Y., Triyoso, D., Tseng, H., Tobin, P., Ramani, N.

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